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STT3520C Datasheet(PDF) 3 Page - SeCoS Halbleitertechnologie GmbH |
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STT3520C Datasheet(HTML) 3 Page - SeCoS Halbleitertechnologie GmbH |
3 / 7 page STT3520C N-Ch: 3.7 A, 23 V, RDS(ON) 58 m P-Ch: -2.7 A, -23 V, RDS(ON) 112 m N & P-Channel Enhancement Mode Mos.FET Elektronische Bauelemente 02-Dec-2010 Rev. A Page 3 of 7 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. DYNAMIC 2 Total Gate Charge N-Ch Qg - 7.5 - nC N-Channel VDS=15V, VGS= 4.5V, ID= 2.7A P-Channel VDS= -15V, VGS= -4.5V, ID= -3.1A P-Ch - 3.8 - Gate-Source Charge N-Ch Qgs - 0.6 - P-Ch - 0.6 - Gate-Drain Charge N-Ch Qgd - 1.0 - P-Ch - 1.5 - Turn-on Delay Time N-Ch Td(on) - 5 - nS N-Channel VDD= 15V, RGEN= 15Ω, VGS= 4.5V, ID= 1A P-Channel VDD= -15V, RGEN= 15Ω VGS= -4.5V, ID= -1A P-Ch - 5 - Rise Time N-Ch Tr - 12 - P-Ch - 15 - Turn-off Delay Time N-Ch Td(off) - 13 - P-Ch - 20 - Fall Time N-Ch Tf - 7 - P-Ch - 20 - Notes 1 Pulse test:PW ≦ 300 us duty cycle ≦ 2%. 2 Guaranteed by design, not subject to production testing. |
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