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STT3423P Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH

Part # STT3423P
Description  P-Channel Enhancement Mode Mos.FET
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Manufacturer  SECOS [SeCoS Halbleitertechnologie GmbH]
Direct Link  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

STT3423P Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH

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STT3423P
-5.7 A, -20 V, RDS(ON) 42 m
P-Channel Enhancement Mode Mos.FET
Elektronische Bauelemente
23-Jul-2010 Rev. A
Page 1 of 4
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.

6
1
3
2
5
4
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize a high cell density
trench process to provide low RDS(on) and to ensure minimal power
loss and heat dissipation. Typical applications are DC-DC converters
and power management in portable and battery-powered products
such as computers, printers, PCMCIA cards, cellular and cordless
telephones.
FEATURES
Low RDS(on) provides higher efficiency and extends battery life.
Low thermal impedance copper leadframe TSOP-6 saves board space.
Fast switching speed.
High performance trench technology.
PRODUCT SUMMARY
PRODUCT SUMMARY
VDS(V)
RDS(on) (m
ID(A)
-20
42@VGS= -4.5V
-5.7
57@VGS= -2.5V
-4.9
80@VGS= -1.8V
-4.1
ABSOLUTE MAXIMUM RATINGS(TA=25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Ratings
Unit
Maximum
Drain-Source Voltage
VDS
-20
V
Gate-Source Voltage
VGS
±8
V
Continuous Drain Current
a
ID @TA=25℃
ID @TA=70℃
-5.7
A
-4.7
Pulsed Drain Current
b
IDM
±20
A
Continuous Source Current (Diode Conduction)
a
IS
-1.7
A
Power Dissipation
a
PD @TA=25℃
2.0
W
PD @TA=70℃
1.3
Operating Junction and Storage Temperature Range
Tj, Tstg
-55 ~ 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum
Unit
Maximum Junction to Ambient
a
t ≦ 5 sec
RJA
50
°C / W
Steady State
90
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature.
REF.
Millimeter
REF.
Millimeter
Min.
Max.
Min.
Max.
A
2.70
3.10
G
0
0.10
B
2.60
3.00
H
0.60 REF.
C
1.40
1.80
J
0.12 REF.
D
1.10 MAX.
K
10°
E
1.90 REF.
L
0.95 REF.
F
0.30
0.50
TSOP-6
B
L
F
H
C
J
D G
K
A
E

Gate

Source

Drain


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