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STT3423P Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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STT3423P Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
1 / 4 page STT3423P -5.7 A, -20 V, RDS(ON) 42 m P-Channel Enhancement Mode Mos.FET Elektronische Bauelemente 23-Jul-2010 Rev. A Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 6 1 3 2 5 4 RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. FEATURES Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe TSOP-6 saves board space. Fast switching speed. High performance trench technology. PRODUCT SUMMARY PRODUCT SUMMARY VDS(V) RDS(on) (m ID(A) -20 42@VGS= -4.5V -5.7 57@VGS= -2.5V -4.9 80@VGS= -1.8V -4.1 ABSOLUTE MAXIMUM RATINGS(TA=25°C UNLESS OTHERWISE NOTED) Parameter Symbol Ratings Unit Maximum Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±8 V Continuous Drain Current a ID @TA=25℃ ID @TA=70℃ -5.7 A -4.7 Pulsed Drain Current b IDM ±20 A Continuous Source Current (Diode Conduction) a IS -1.7 A Power Dissipation a PD @TA=25℃ 2.0 W PD @TA=70℃ 1.3 Operating Junction and Storage Temperature Range Tj, Tstg -55 ~ 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Maximum Unit Maximum Junction to Ambient a t ≦ 5 sec RJA 50 °C / W Steady State 90 Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature. REF. Millimeter REF. Millimeter Min. Max. Min. Max. A 2.70 3.10 G 0 0.10 B 2.60 3.00 H 0.60 REF. C 1.40 1.80 J 0.12 REF. D 1.10 MAX. K 0° 10° E 1.90 REF. L 0.95 REF. F 0.30 0.50 TSOP-6 B L F H C J D G K A E Gate Source Drain |
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