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STT3405P Datasheet(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH |
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STT3405P Datasheet(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH |
2 / 4 page STT3405P -4.9 A, -20 V, RDS(ON) 56 m P-Channel Enhancement Mode MOSFET Elektronische Bauelemente 06-Jan-2011 Rev. A Page 2 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Static Gate-Threshold Voltage VGS(th) -0.7 - - V VDS= VGS, ID= -250μA Gate-Body Leakage IGSS - - ±100 nA VDS= 0V, VGS= ±12V Zero Gate Voltage Drain Current IDSS - - -1 μA VDS= -16V, VGS= 0V - - -5 VDS= -16V, VGS= 0V, TJ= 55°C On-State Drain Current 1 ID(on) -15 - - A VDS = -4.5V, VGS= -4.5V Drain-Source On-Resistance 1 RDS(ON) - - 56 mΩ VGS= -4.5V, ID= -4.9A - - 80 VGS= -2.5V, ID= -4.2A - - 150 VGS= -1.8V, ID= -3.1A Forward Transconductance 1 gfs - 11 - S VDS= -10V, ID= -4.9A Diode Forward Voltage VSD - -0.8 - V IS= 1.7A, VGS= 0V Dynamic 2 Total Gate Charge Qg - 8 - nC VDS= -10V, VGS= -4.5V, ID= -4.9A Gate-Source Charge Qgs - 1.8 - Gate-Drain Charge Qgd - 1.9 - Turn-on Delay Time Td(on) - 22 - nS VDD= -10V, VGEN= -4.5V, RL= 6, ID= -1A Rise Time Tr - 35 - Turn-off Delay Time Td(off) - 45 - Fall Time Tf - 25 - Notes: 1. Pulse test:PW ≦ 300 us duty cycle ≦ 2%. 2. Guaranteed by design, not subject to production testing. |
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