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SSG4639STM Datasheet(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH |
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SSG4639STM Datasheet(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH |
2 / 5 page SSG4639STM P-Ch Enhancement Mode Power MOSFET -14 A, -30 V, RDS(ON) 8.5 m Elektronische Bauelemente 13-May-2010 Rev. B Page 2 of 5 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise specified) PARAMETER SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS -30 - - V VGS=0V, ID=250μA Zero Gate Voltage Drain Current IDSS - - -1 μA VDS= -24V, VGS=0V Gate-Body Leakage Current IGSS - - ±10 μA VGS=±20V, VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(th) -0.8 -1.7 -2.0 V VDS= VGS, ID=-250μA Drain-Source On-State Resistance RDS(ON) - 7 8.5 mΩ VGS=-10V, ID=-14A - 9.8 13 VGS=-4.5V, ID=-11.3A Forward Transconductance gfs - 32 - S VDS=-10V, ID=-14A DYNAMIC CHARACTERISTICS C Input Capacitance CISS - 4049 - pF VDS=-15V, VGS=0V, f=1.0MHz Output Capacitance COSS - 641 - Reverse Transfer Capacitance CRSS - 351 - SWITCHING CHARACTERISTICS C Turn-On Delay Time Td(on) - 24 - nS VDD=-15V ID=-1A VGS=-10V RGEN=3Ω Rise Time Tr - 68 - Turn-Off Delay Time Td(off) - 484 - Fall Time Tf - 188 - Total Gate Charge Qg - 95 - nC VDS=-15V, ID=-14A, VGS=-10V - 40 - VDS=-15V, ID=-14A, VGS=-4.5V Gate-Source Charge Qgs - 6 - VDS=-15V, ID=-14A, VGS=-10V Gate-Drain Charge Qgd - 23 - DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Maximum Continuius Drain-Source Diode Forward Current IS - - -2.0 A Diode Forward Voltage b VSD - -0.7 -1.2 V VGS=0V, IS=-2.0A Notes a. Surface Mounted on FR4 Board, t ≦ 10 sec. b. Pulse Test:Pulse Width ≦ 300 μs, Duty Cycle ≦ 2%. c. Guaranteed by design, not subject to production testing. d. Starting TJ=25°C, L=3.0mH, VDD=30V, VGS=10V. (See Figure13) |
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