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SSG4390N Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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SSG4390N Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 4 page  Elektronische Bauelemente SSG4390N 1.9A, 150V, RDS(ON) 625m N-Ch Enhancement Mode Power MOSFET 09-Mar-2011 Rev. B Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. A H B M D C J K F L E N G RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. FEATURES Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SOP-8 saves board space. Fast switching speed. High performance trench technology. APPLICATION DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. PACKAGE INFORMATION Package MPQ LeaderSize SOP-8 2.5K 13’ inch ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Rating Unit Drain-Source Voltage VDS 150 V Gate-Source Voltage VGS ±20 V TA = 25°C 1.9 Continuous Drain Current 1 TA = 70°C ID 1.5 A Pulsed Drain Current 2 IDM 10 A Continuous Source Current (Diode Conduction) 1 IS 3.6 A TA = 25°C 3.1 Total Power Dissipation 1 TA = 70°C PD 2.2 W Operating Junction & Storage Temperature Range TJ, TSTG -55 ~ 150 °C THERMAL RESISTANCE RATINGS t ≦ 10 sec 40 °C / W Maximum Junction to Ambient 1 Steady State RθJA 80 °C / W Notes: 1 Surface Mounted on 1” x 1” FR4 Board. 2 Pulse width limited by maximum junction temperature. SOP-8 Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 5.80 6.20 H 0.35 0.49 B 4.80 5.00 J 0.375 REF. C 3.80 4.00 K 45° D0° 8° L 1.35 1.75 E 0.40 0.90 M 0.10 0.25 F 0.19 0.25 N 0.25 REF. G 1.27 TYP. G S S S D D D D |
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