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SSD55N03 Datasheet(PDF) 4 Page - SeCoS Halbleitertechnologie GmbH

Part # SSD55N03
Description  N-Channel Enhancement Mode Power Mos.FET
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Manufacturer  SECOS [SeCoS Halbleitertechnologie GmbH]
Direct Link  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

SSD55N03 Datasheet(HTML) 4 Page - SeCoS Halbleitertechnologie GmbH

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Elektronische Bauelemente
SSD55N03
55A, 25V,RDS(ON)6m
N-Channel Enhancement Mode Power Mos.FET
Ω
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 4 of 4
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
28 A
V DS = 16 V
V DS = 20 V
V DS = 24 V


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