SSD50P06-15D datasheet(2/2 Pages) SECOS

Part #	SSD50P06-15D

Description	P-Ch Enhancement Mode Power MOSFET

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Manufacturer	SECOS [SeCoS Halbleitertechnologie GmbH]

Direct Link	http://www.secosgmbh.com

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Elektronische Bauelemente

SSD50P06-15D

61A, -60V, RDS(ON) 17mΩ

P-Ch Enhancement Mode Power MOSFET

20-Dec-2010 Rev.B

Page 2 of 2

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Teat Conditions

Static

Gate-Threshold Voltage

VGS(th)

-1

-

VDS= VGS, ID = -250 μA

Gate-Body Leakage

IGSS

-

±100

nA

VDS = 0V, VGS= ±20V

-

-1

VDS= -48V, VGS= 0V

Zero Gate Voltage Drain Current

IDSS

-

-10

μA

VDS= -48V, VGS=0V, TJ=55°C

On-State Drain Current

1

ID(on)

-20

-

A

VDS = -5V, VGS= -10V

-

17

VGS= -10V, ID= -45A

Drain-Source On-Resistance

1

RDS(ON)

-

23

mΩ

VGS= -4.5V, ID= -39A

Forward Transconductance

1

gfs

-

8

-

S

VDS= -15V, ID= -45A

Diode Forward Voltage

VSD

-

-1.2

V

IS= -2.5 A, VGS= 0 V

Dynamic

2

Total Gate Charge

Qg

-

46

-

Gate-Source Charge

Qgs

-

18

-

Gate-Drain Charge

Qgd

-

41

-

nC

VDS = -30 V

VGS = -4.5 V

ID = -45 A

Turn-on Delay Time

Td(on)

-

20

-

Rise Time

Tr

-

20

-

Turn-off Delay Time

Td(off)

-

205

-

Fall Time

Tf

-

90

-

nS

VDD= -30 V

ID= -1 A

VGEN = -10 V

RL= 30 

RG= 6 

Notes:

1.

Pulse test：Pulse width ≦ 300 μs, duty cycle ≦ 2％.

2.

Guaranteed by design, not subject to production testing.

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