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D721S Datasheet(PDF) 5 Page - eupec GmbH |
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D721S Datasheet(HTML) 5 Page - eupec GmbH |
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5 / 7 page  Fig. 11 Turn-off-losses Eoff = f(di/dt) diodes with VFmax Application: GTO-freewheeling diode Parameter:IFM; Snubberdiode D 291 S tvj = 125°C; CS = 4 µF für vR ≤ VRM CS = 24 µF für vR ≥ VRM LS = 0,2 µH D 721 S VR(Spr) = 3000 V VR(Spr) = 2000 V 1000 100 10 10 100 1000 D 721 S_08 IFM = 3000A 2000A 1000A 600A 300A 100A 3 4 5 7 9 2 2 3 4 5 7 9 2 3 4 5 6 7 8 9 2 3 4 5 6 7 8 9 -di/dt [A/µs] Qrr [µAs] -di/dt IRM Qrr VR IFM 1000 100 10 10 100 1000 D 721 S_09 2 3 4 5 6 7 8 9 2 3 4 5 6 7 8 9 2 3 4 5 7 9 2 3 4 5 7 9 Qrr [µAs] -di/dt [A/µs] -di/dt IRM Qrr VR IFM IFM = 3000A 2000A 1000A 600A 300A 100A 10 1 0,1 10 100 1000 D 721 S_11 2 3 4 5 6 7 8 9 2 3 4 5 6 7 8 9 2 3 4 5 7 9 2 3 4 5 7 9 IFM = 3000A 1000A 600A 300A 100A Eoff [Ws] -di/dt [A/µs] -di/dt IRM Qrr VR IFM VR(Spr) VR(Spr) = 3000 V VR(Spr) = 2000 V Fig. 8 Reverse recovery charge (upper limit, ca. 98% values) Application: GTO-freewheeling diode Parameter: IFM tvj ≤ 125°C; CS ≥ 4µF RS = 0 Ω; VR > 2000 V ... 3000 V Fig. 9 Reverse recovery charge (lower limit, ca. 2% values) Application: GTO-freewheeling diode Parameter: IFM tvj ≤ 125°C; CS ≥ 4µF RS = 0 Ω; VR > 2000 V ... 3000 V 10 1 0,1 10 100 1000 D 721 S_13 3000A 1000A 600A 300A 100A Eoff [Ws] -di/dt [A/µs] -di/dt IRM Qrr VR IFM VR(Spr) 2 3 4 5 6 7 8 9 2 3 4 5 6 7 8 9 2 3 4 5 7 9 2 3 4 5 7 9 VR(Spr) = 3000 V VR(Spr) = 2000 V Fig. 10 Turn-off-losses Eoff = f(di/dt) diodes with VFmax Application: GTO-freewheeling diode Parameter:IFM; Snubberdiode D 291 S tvj = 125°C; CS = 6 µF für vR ≤ VRM CS = 36 µF für vR ≥ VRM LS = 0,2 µH |
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