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SMG2319P Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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SMG2319P Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 5 page  Elektronische Bauelemente SMG2319P -2.1A , -30V , RDS(ON) 200 m P-Channel Enhancement MOSFET 12-Apr-2011 Rev. B Page 1 of 5 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. SC-59 Top View A L C B D G H J F K E 1 2 3 1 2 3 RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The miniature surface mount MOSFETs utilize high cell density process. Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. FEATURES Low RDS(on) provides higher efficiency and extends battery life. Fast Switch. Low Gate Charge. Miniature SC-59 Surface Mount Package Saves Board Space. APPLICATION Voltage control small signal switch, power management in portable and battery-powered products such as computer portable electronics and other battery power application. PACKAGE INFORMATION Package MPQ Leader Size SC-59 3K 7’ inch MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Ratings Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±20 V TA=25°C -2.1 Continuous Drain Current 1 TA=70°C ID -1.7 A Pulsed Drain Current 2 IDM ±10 A Continuous Source Current (Diode Conduction) 1 IS -0.4 A TA=25°C 1.25 Power Dissipation 1 TA=70°C PD 0.8 W Operating Junction and Storage Temperature Range TJ, TSTG -55 ~ 150 °C Thermal Resistance Data t≦5 sec 250 Maximum Junction to Ambient 1 Steady-State RθJA 285 °C/W Notes: 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature. Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 2.70 3.10 G 0.10 REF. B 2.25 3.00 H 0.40 REF. C 1.30 1.70 J 0.10 0.20 D 1.00 1.40 K 0.45 0.55 E 1.70 2.30 L 0.85 1.15 F 0.35 0.50 1 2 3 |
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