IRF044SMD

Prelim. 7/00

LAB

SEME

E-mail: sales@semelab.co.uk

Website: http://www.semelab.co.uk

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Reference to 25°C

f = 1MHz

Drain – Source Breakdown Voltage

Temperature Coefficient of

Breakdown Voltage

Static Drain – Source On–State

Gate Threshold Voltage

Zero Gate Voltage Drain Current

Forward Gate – Source Leakage

Reverse Gate – Source Leakage

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn–On Delay Time

Rise Time

Turn–Off Delay Time

Fall Time

Continuous Source Current

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

Forward Turn–On Time

60

0.68

0.040

0.050

24

17

25

250

100

–100

2400

1100

230

39

88

6.7

15

18

52

23

130

81

79

34

136

2.5

220

1.6

Negligible

0.8

2.8

V

V/°C

W

V

W

mA

nA

pF

nC

nC

ns

A

V

ns

mC

nH

STATIC ELECTRICAL RATINGS

Notes

1) Pulse Test: Pulse Width

£ 300ms, d£ 2%

2) Repetitive Rating – Pulse width limited by maximum junction temperature.

DYNAMIC CHARACTERISTICS

SOURCE – DRAIN DIODE CHARACTERISTICS

PACKAGE CHARACTERISTICS