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IRF044SMD Datasheet(PDF) 2 Page - Seme LAB |
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IRF044SMD Datasheet(HTML) 2 Page - Seme LAB |
2 / 2 page IRF044SMD Prelim. 7/00 LAB SEME Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Parameter Test Conditions Min. Typ. Max. Unit VGS = 0 ID = 1mA Reference to 25°C ID = 1mA VGS = 10V ID = 21A VGS = 10V ID = 34A VDS = VGS ID = 250mA VDS ³ 15V IDS = 21A VGS = 0 VDS = 0.8BVDSS TJ = 125°C VGS = 20V VGS = –20V VGS = 0 VDS = 25V f = 1MHz VGS = 10V ID = 34A VDS = 0.5BVDSS ID = 34A VDS = 0.5BVDSS VDD = 30V ID = 34A RG = 9.1W IS = 34A TJ = 25°C VGS = 0 IF = 34A TJ = 25°C di / dt £ 100A/msVDD £ 50V ELECTRICAL CHARACTERISTICS (Tamb = 25°C unless otherwise stated) Drain – Source Breakdown Voltage Temperature Coefficient of Breakdown Voltage Static Drain – Source On–State Resistance 1 Gate Threshold Voltage Forward Transconductance 1 Zero Gate Voltage Drain Current Forward Gate – Source Leakage Reverse Gate – Source Leakage Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 1 Gate – Source Charge 1 Gate – Drain (“Miller”) Charge 1 Turn–On Delay Time Rise Time Turn–Off Delay Time Fall Time Continuous Source Current Pulse Source Current 2 Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn–On Time 60 0.68 0.040 0.050 24 17 25 250 100 –100 2400 1100 230 39 88 6.7 15 18 52 23 130 81 79 34 136 2.5 220 1.6 Negligible 0.8 2.8 V V/°C W V S( W mA nA pF nC nC ns A V ns mC nH BVDSS DBVDSS DTJ RDS(on) VGS(th) gfs IDSS IGSS IGSS Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf IS ISM VSD trr Qrr ton LD LS STATIC ELECTRICAL RATINGS Notes 1) Pulse Test: Pulse Width £ 300ms, d£ 2% 2) Repetitive Rating – Pulse width limited by maximum junction temperature. DYNAMIC CHARACTERISTICS SOURCE – DRAIN DIODE CHARACTERISTICS Internal Drain Inductance (from centre of drain pad to die) Internal Source Inductance (from centre of source pad to end of source bond wire) PACKAGE CHARACTERISTICS |
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