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LX5512ELQ Datasheet(PDF) 2 Page - Microsemi Corporation |
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LX5512ELQ Datasheet(HTML) 2 Page - Microsemi Corporation |
2 / 11 page LX5512E PRODUCTION DATA SHEET Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 2 Copyright © 2003 Rev. 2.0c, 2005-08-18 InGaP HBT 2.4 – 2.5 GHz Power Amplifier TM ® ABSOLUTE MAXIMUM RATINGS DC Supply Voltage, RF off ...............................................................................6V Collector Current ........................................................................................400mA Total Power Dissipation.................................................................................... 2W RF Input Power ............................................................................................. 5dBm Operation Ambient Temperature ...................................................-40°C to +85°C Storage Temperature....................................................................-65°C to +150°C Peak Package Solder Reflow Temp (40 seconds maximum exposure) ......... 260°C (+0, -5) Note: Exceeding these ratings could cause damage to the device. All voltages are with respect to Ground. Currents are positive into, negative out of specified terminal . TH ERMAL DATA LQ Plastic MLPQ 16-Pin THERMAL RESISTANCE -JUNCTION TO CASE, θ JC 10 °C/W THERMAL RESISTANCE -JUNCTION TO AMBIENT, θ JA 50 °C/W PACKAGE PIN OUT 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 VC3 RF OUT RF OUT DET PWR VB1 RF IN RF IN N.C. * Pad is GND * LQ PACKAGE (Bottom View) N.C. – No internal connection RoHS / Pb-free 100% Matte Tin Lead Finish FUNCTIONAL PIN DESCRIPTION Name Description RF IN RF input for the power amplifier. This pin is DC-shorted to GND but AC-coupled to the transistor base of the first stage. VB1 Bias current control voltage for the first stage. VB2 Bias current control voltage for the second stage VB3 Bias current control voltage for the third stage. The VB3 pin can be connected with the first and second stage control voltage (VB1,VB2) into a single reference voltage (referred to as Vref) through an external resistor bridge. VCC Supply voltage for the bias reference and control circuits. The VCC feed line should be terminated with a 10 nF bypass capacitor close to connector pin. This pin can be combined with VC1, VC2 and VC3 pins, resulting in a single supply voltage (referred to as Vc). RF OUT RF output for the power amplifier. This pin is DC-decoupled from the transistor collector of the third stage.. VC1 Power supply for first stage amplifier. The VC1 feedline should be terminated with a 120pF bypass capacitor, followed by a 10 Ohm resistor VC2 Power supply for second stage amplifier. The VC2 feedline should be terminated with a 47 pF bypass capacitor, followed by a 5 Ohm resistor VC3 Power supply for the third stage amplifier. The VC3 feedline should be terminated with a 120 pF bypass capacitor. This pin can be combined with VC1,VC2 and VCC pins, resulting in a single supply voltage (referred to as Vc DET_PWR Power detector output-coupled pin should be terminated with a 100 kOhm loading resistor GND The center metal base of the MLP package provides both DC and RF ground as well as heat sink for the power amplifier.. |
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