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LX5512B Datasheet(PDF) 2 Page - Microsemi Corporation

Part # LX5512B
Description  InGaP HBT 2.4 ??2.5 GHz Power Amplifier
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Manufacturer  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

LX5512B Datasheet(HTML) 2 Page - Microsemi Corporation

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LX5512B
PRODUCTION DATA SHEET
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 2
Copyright
© 2004
Rev. 1.0b, 2005-08-18
InGaP HBT 2.4 – 2.5 GHz Power Amplifier
TM
®
ABSOLUTE MAXIMUM RATINGS
DC Supply Voltage, RF off......................................................................................................7V
Collector Current..............................................................................................................500mA
Total Power Dissipation .........................................................................................................2W
RF Input Power ..................................................................................................................5dBm
Operation Ambient Temperature ............................................................................ -40 to +85
oC
Storage Temperature............................................................................................ -65 to +150
oC
Package Peak Temp for Solder Reflow (40 Seconds Maximum Exposure)..........260°C(+0, -5)
Note: Exceeding these ratings could cause damage to the device. All voltages are with respect to
Ground. Currents are positive into, negative out of specified terminal
.
TH ERMAL DATA
LQ Plastic MLPQ 16-Pin
THERMAL RESISTANCE
-JUNCTION TO CASE,
θ
JC
10
°C/W
THERMAL RESISTANCE
-JUNCTION TO AMBIENT,
θ
JA
50
°C/W
Junction Temperature Calculation: TJ = TA + (PD x θJA).
The
θJA numbers are guidelines for the thermal performance of the device/pc-board system. All of the
above assume no ambient airflow.
PACKAGE PIN OUT
e
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
VC3
RF OUT
RF OUT
DET
N/C
RF IN
N/C
N/C
LQ PACKAGE
(Bottom View)
RoHS / Pb-free 100% Matte Tin Lead Finish
FUNCTIONAL PIN DESCRIPTION
Name
Description
RF IN
RF input for the power amplifier. This pin is directly connected to base, a 10pF decoupling capacitor may be
needed.
VB12
Bias current control voltage for the first and second stage.
VB3
Bias current control voltage for the third stage. The VB3 pin can be connected with the first and second stage
control voltage (VB12) into a single reference voltage (referred to as VREF) through an external resistor bridge.
VCC
Supply voltage for the bias reference and control circuits. The VCC feed line should be terminated with a 10nF
bypass capacitor close to connector pin. This pin can be combined with VC1, VC2 and VC3 pins, resulting in a
single supply voltage (referred to as VC).
RF OUT
RF output for the power amplifier. This pin is DC-decoupled from the transistor collector of the third stage.
VC1
Power supply for first stage amplifier. The VC1 feed line should be terminated with a 10pF bypass capacitor,
followed by a 36 Ohm resistor. This pin can be combined with VC2,VC3 and VCC pins, resulting in a single
supply voltage (referred to as VC).
VC2
Power supply for second stage amplifier. The VC2 feed line should be terminated with a 18pF bypass capacitor.
This pin can be combined with VC1,VC3 and VCC pins, resulting in a single supply voltage (referred to as VC).
VC3
Power supply for the third stage amplifier. The VC3 feed line should be terminated with 27 pF and 10 nF bypass
capacitors. This pin can be combined with VC1,VC2 and VCC pins, resulting in a single supply voltage (referred
to as VC).
REF
Power detector reference output pin should be terminated with a
Ω
100K
loading resistor
DET
Power detector output pin should be terminated with a
Ω
100K loading resistor
GND
The center metal base of the MLP package provides both DC and RF ground as well as heat sink for the power
amplifier.


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