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LX5512B Datasheet(PDF) 2 Page - Microsemi Corporation |
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LX5512B Datasheet(HTML) 2 Page - Microsemi Corporation |
2 / 8 page LX5512B PRODUCTION DATA SHEET Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 2 Copyright © 2004 Rev. 1.0b, 2005-08-18 InGaP HBT 2.4 – 2.5 GHz Power Amplifier TM ® ABSOLUTE MAXIMUM RATINGS DC Supply Voltage, RF off......................................................................................................7V Collector Current..............................................................................................................500mA Total Power Dissipation .........................................................................................................2W RF Input Power ..................................................................................................................5dBm Operation Ambient Temperature ............................................................................ -40 to +85 oC Storage Temperature............................................................................................ -65 to +150 oC Package Peak Temp for Solder Reflow (40 Seconds Maximum Exposure)..........260°C(+0, -5) Note: Exceeding these ratings could cause damage to the device. All voltages are with respect to Ground. Currents are positive into, negative out of specified terminal . TH ERMAL DATA LQ Plastic MLPQ 16-Pin THERMAL RESISTANCE -JUNCTION TO CASE, θ JC 10 °C/W THERMAL RESISTANCE -JUNCTION TO AMBIENT, θ JA 50 °C/W Junction Temperature Calculation: TJ = TA + (PD x θJA). The θJA numbers are guidelines for the thermal performance of the device/pc-board system. All of the above assume no ambient airflow. PACKAGE PIN OUT e 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 VC3 RF OUT RF OUT DET N/C RF IN N/C N/C LQ PACKAGE (Bottom View) RoHS / Pb-free 100% Matte Tin Lead Finish FUNCTIONAL PIN DESCRIPTION Name Description RF IN RF input for the power amplifier. This pin is directly connected to base, a 10pF decoupling capacitor may be needed. VB12 Bias current control voltage for the first and second stage. VB3 Bias current control voltage for the third stage. The VB3 pin can be connected with the first and second stage control voltage (VB12) into a single reference voltage (referred to as VREF) through an external resistor bridge. VCC Supply voltage for the bias reference and control circuits. The VCC feed line should be terminated with a 10nF bypass capacitor close to connector pin. This pin can be combined with VC1, VC2 and VC3 pins, resulting in a single supply voltage (referred to as VC). RF OUT RF output for the power amplifier. This pin is DC-decoupled from the transistor collector of the third stage. VC1 Power supply for first stage amplifier. The VC1 feed line should be terminated with a 10pF bypass capacitor, followed by a 36 Ohm resistor. This pin can be combined with VC2,VC3 and VCC pins, resulting in a single supply voltage (referred to as VC). VC2 Power supply for second stage amplifier. The VC2 feed line should be terminated with a 18pF bypass capacitor. This pin can be combined with VC1,VC3 and VCC pins, resulting in a single supply voltage (referred to as VC). VC3 Power supply for the third stage amplifier. The VC3 feed line should be terminated with 27 pF and 10 nF bypass capacitors. This pin can be combined with VC1,VC2 and VCC pins, resulting in a single supply voltage (referred to as VC). REF Power detector reference output pin should be terminated with a Ω 100K loading resistor DET Power detector output pin should be terminated with a Ω 100K loading resistor GND The center metal base of the MLP package provides both DC and RF ground as well as heat sink for the power amplifier. |
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