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D2293UK Datasheet(PDF) 1 Page - Seme LAB

Part # D2293UK
Description  METAL GATE RF SILICON FET
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Manufacturer  SEME-LAB [Seme LAB]
Direct Link  http://www.semelab.co.uk
Logo SEME-LAB - Seme LAB

D2293UK Datasheet(HTML) 1 Page - Seme LAB

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D2293UK
Prelim. 7/99
Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail: sales@semelab.co.uk
Website http://www.semelab.co.uk
PD
Power Dissipation
BVDSS
Drain – Source Breakdown Voltage
BVGSS
Gate – Source Breakdown Voltage
ID(sat)
Drain Current *
Tstg
Storage Temperature
Tj
Maximum Operating Junction Temperature
42W
40V
±20V
8A
–65 to 150°C
200°C
MECHANICAL DATA
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
10W – 12.5V – 500MHz
SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• VERY LOW Crss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN – 11 dB MINIMUM
SOT 171
PIN 1
SOURCE
PIN 3
GATE
PIN 5
SOURCE
PIN 2
SOURCE
PIN 4
DRAIN
PIN 6
SOURCE
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
APPLICATIONS
• HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 1 GHz
METAL GATE RF SILICON FET
TetraFET


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