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D2201 Datasheet(PDF) 2 Page - Seme LAB

Part # D2201
Description  METAL GATE RF SILICON FET
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Manufacturer  SEME-LAB [Seme LAB]
Direct Link  http://www.semelab.co.uk
Logo SEME-LAB - Seme LAB

D2201 Datasheet(HTML) 2 Page - Seme LAB

  D2201 Datasheet HTML 1Page - Seme LAB D2201 Datasheet HTML 2Page - Seme LAB  
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D2201UK
Prelim. 12/00
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VGS =0
ID = 10mA
VDS = 12.5V
VGS =0
VGS = 20V
VDS =0
ID = 10mA
VDS =VGS
VDS = 10V
ID = 0.2A
PO = 2.5W
VDS = 12.5V
IDQ = 0.1A
f = 1GHz
VDS =0
VGS = –5V f = 1MHz
VDS = 12.5V VGS = 0
f = 1MHz
VDS = 12.5V VGS = 0
f = 1MHz
V
mA
µA
V
S
dB
%
pF
pF
pF
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Drain–Source
BVDSS
Breakdown Voltage
Zero Gate Voltage
IDSS
Drain Current
IGSS
Gate Leakage Current
VGS(th) Gate Threshold Voltage*
gfs
Forward Transconductance*
GPS
Common Source Power Gain
η
Drain Efficiency
VSWR
Load Mismatch Tolerance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
40
1
1
17
0.18
10
40
20:1
12
10
1
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
RTHj–case
Thermal Resistance Junction – Case
Max. 10°C / W
THERMAL DATA
* Pulse Test:
Pulse Duration = 300
µs , Duty Cycle ≤ 2%


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