APT28M120B2_09 datasheet(3/4 Pages) MICROSEMI

Part #	APT28M120B2

Description	N-Channel MOSFET

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Manufacturer	MICROSEMI [Microsemi Corporation]

Direct Link	http://www.microsemi.com

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3 / 4 page

V

GS

= 6, 7, 8 & 9V

4.5V

T

J

= 125°C

T

J

= 25°C

T

J

= -55°C

V

GS

= 10V

5V

V

DS

> I

D(ON)

x R

DS(ON)

MAX.

250µSEC. PULSE TEST

@ <0.5 % DUTY CYCLE

NORMALIZED TO

V

GS

= 10V @ 14A

T

J

= 125°C

T

J

= 25°C

T

J

= -55°C

C

oss

C

iss

I

D

= 14A

V

DS =

960V

V

DS =

240V

V

DS =

600V

T

J

= 150°C

T

J

= 25°C

T

J

= 125°C

T

J

= 150°C

C

rss

T

J

= 125°C

T

J

= 25°C

T

J

= -55°C

V

DS(ON)

, DRAIN-TO-SOURCE VOLTAGE (V)

V

DS

, DRAIN-TO-SOURCE VOLTAGE (V)

Figure 1, Output Characteristics

Figure 2, Output Characteristics

T

J

, JUNCTION TEMPERATURE (°C)

V

GS

, GATE-TO-SOURCE VOLTAGE (V)

Figure 3, R

DS(ON)

vs Junction Temperature

Figure 4, Transfer Characteristics

I

D

, DRAIN CURRENT (A)

V

DS

, DRAIN-TO-SOURCE VOLTAGE (V)

Figure 5, Gain vs Drain Current

Figure 6, Capacitance vs Drain-to-Source Voltage

Q

g

, TOTAL GATE CHARGE (nC)

V

SD

, SOURCE-TO-DRAIN VOLTAGE (V)

Figure 7, Gate Charge vs Gate-to-Source Voltage

Figure 8, Reverse Drain Current vs Source-to-Drain Voltage

0

5

10

15

20

25

30

0

5

10

15

20

25

30

-55

-25

0

25

50

75

100 125 150

0

1

2

3

4

5

6

7

8

0

2

4

6

8

10

12

14

16

0

200

400

600

800

1000

1200

0

50

100 150 200 250 300 350 400

0

0.2

0.4

0.6

0.8

1.0

1.2

90

80

70

60

50

40

30

20

10

0

3.0

2.5

2.0

1.5

1.0

0.5

0

40

35

30

25

20

15

10

5

0

16

14

12

10

8

6

4

2

0

30

25

20

15

10

5

0

100

80

60

40

20

0

20,000

10,000

1000

100

10

100

90

80

70

60

50

40

30

20

10

0

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