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BAS21 Datasheet(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH

Part # BAS21
Description  Surface Mount Switching Diodes
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Manufacturer  SECOS [SeCoS Halbleitertechnologie GmbH]
Direct Link  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

BAS21 Datasheet(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH

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Any changing of specification will not be informed individua
BAS21 Series
Surface Mount Switching Diodes
http://www.SeCoSGmbH.com
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Reverse Voltage Leakage Current
(VR = 200 Vdc)
(VR = 200 Vdc, TJ = 150°C)
IR
1.0
100
µAdc
Reverse Breakdown Voltage
(IBR = 100 µAdc)
V(BR)
250
Vdc
Forward Voltage
(IF = 100 mAdc)
(IF = 200 mAdc)
VF
1000
1250
mV
Diode Capacitance
(VR = 0, f = 1.0 MHz)
CD
5.0
pF
Reverse Recovery Time
(IF = IR = 30 mAdc, RL = 100 Ω)
trr
50
ns
1. FR– 5 = 1.0
 0.75  0.062 in.
2. Alumina = 0.4
 0.3  0.024 in. 99.5% alumina.
Notes: 1. A 2.0 k
Ω variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
+10 V
2 k
820
0.1
µF
DUT
VR
100
µH
0.1
µF
50
Ω Οutput
Pulse
Generator
50
Ω Input
Sampling
Oscilloscope
tr
tp
t
10%
90%
IF
IR
trr
t
IR(REC) = 1 mA
Output Pulse
(IF = IR = 10 mA; measured
at IR(REC) = 1 mA)
IF
Input Signal
Figure 1. Recovery Time Equivalent Test Circuit
Figure 2. Forward Voltage
Figure 3. Reverse Leakage
3500
Forward Current (mA)
2500
1500
500
0
0.2
0.5
2
1
3000
2000
1000
5
10
20
50
100
200
0.1
7000
Reverse Voltage (V)
5000
3000
5
0
2
1
6000
4000
6
5
10
20
50
100
200
1
2
3
4
TA = 155°C
TA = –55°C
TA = 25°C
300
TA = 155°C
TA = 25°C
TA = –55°C
01-Jun-2002 Rev. A
Page
2 of 2


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