D1204 datasheet(1/2 Pages) SEME-LAB

Part #	D1204

Description	METAL GATE RF SILICON FET

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Manufacturer	SEME-LAB [Seme LAB]

Direct Link	http://www.semelab.co.uk

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D1204UK

Prelim. 1/99

Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.

E-mail: sales@semelab.co.uk

Website http://www.semelab.co.uk

PD

Power Dissipation

BVDSS

Drain – Source Breakdown Voltage

BVGSS

Gate – Source Breakdown Voltage

ID(sat)

Drain Current

Tstg

Storage Temperature

Tj

Maximum Operating Junction Temperature

117W

40V

±20V

15A

–65 to 150°C

200°C

MECHANICAL DATA

GOLD METALLISED

MULTI-PURPOSE SILICON

DMOS RF FET

30W – 12.5V – 500MHz

SINGLE ENDED

FEATURES

• SIMPLIFIED AMPLIFIER DESIGN

• SUITABLE FOR BROAD BAND APPLICATIONS

•LOW Crss

• USEFUL PO AT 1GHz

• LOW NOISE

• HIGH GAIN – 10 dB MINIMUM

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)

APPLICATIONS

• HF/VHF/UHF COMMUNICATIONS

from 1 MHz to 1 GHz

METAL GATE RF SILICON FET

TetraFET

B

C

A

D

(2 pls)

E

F

G

H

I

J

K

M

N

1

4

3

2

5

DT

PIN 1

SOURCE (COMMON)

PIN 3

SOURCE (COMMON)

PIN 5

DRAIN

PIN 2

GATE

PIN 4

SOURCE (COMMON)

DIM

mm

Tol.

Inches

Tol.

A

6.35 DIA

0.13

0.250 DIA

0.005

B

3.17 DIA

0.13

0.125 DIA

0.005

C

18.41

0.25

0.725

0.010

D

5.46

0.13

0.215

0.005

E

5.21

0.13

0.205

0.005

F

7.62

MAX

0.300

MAX

G

21.59

0.38

0.850

0.015

H

3.94

0.13

0.155

0.005

I

12.70

0.13

0.500

0.005

J

0.13

0.03

0.005

0.001

K

24.76

0.13

0.975

0.005

M

2.59

0.13

0.102

0.005

N

4.06

0.25

0.160

0.010

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