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T560N Datasheet(PDF) 2 Page - Infineon Technologies AG |
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T560N Datasheet(HTML) 2 Page - Infineon Technologies AG |
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2 / 10 page  N Netz-Thyristor Phase Control Thyristor Datenblatt / Data sheet T560N IFBIP D AEC / 2009-12-07, H.Sandmann A 31/09 2/10 Seite/page Thermische Eigenschaften Mechanische Eigenschaften Elektrische Eigenschaften / Electrical properties Charakteristische Werte / Characteristic values Freiwerdezeit circuit commutated turn-off time Tvj = Tvj max, iTM = ITAVM vRM = 100 V, vDM = 0,67 VDRM dvD/dt = 20 V/µs, -diT/dt = 10 A/µs 4.Kennbuchstabe / 4 th letter O tq typ. 250 µs Thermische Eigenschaften / Thermal properties Innerer Wärmewiderstand thermal resistance, junction to case Kühlfläche / cooling surface beidseitig / two-sided, θ = 180°sin beidseitig / two-sided, DC Anode / anode, θ = 180°sin Anode / anode, DC Kathode / cathode, θ = 180°sin Kathode / cathode, DC RthJC max. max. max. max. max. max. 0,044 0,042 0,067 0,065 0,121 0,119 °C/W °C/W °C/W °C/W °C/W °C/W Übergangs-Wärmewiderstand thermal resistance, case to heatsink Kühlfläche / cooling surface beidseitig / two-sides einseitig / single-sides RthCH max. max. 0,0075 0,0150 °C/W °C/W Höchstzulässige Sperrschichttemperatur maximum junction temperature Tvj max 125 °C Betriebstemperatur operating temperature Tc op -40...+125 °C Lagertemperatur storage temperature Tstg -40...+150 °C Mechanische Eigenschaften / Mechanical properties Gehäuse, siehe Anlage case, see annex Seite 3 page 3 Si-Element mit Druckkontakt Si-pellet with pressure contact Anpresskraft clamping force F 5...10 kN Steueranschlüsse control terminals Gate (flat) Gate (round, based on AMP 60598) Kathode / cathode A 2,8x0,5 Ø 1,5 A 4,8x0,5 mm mm mm Gewicht weight G typ. 110 g Kriechstrecke creepage distance 6 mm Schwingfestigkeit vibration resistance f = 50 Hz 50 m/s² |
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