SIGC11T60SNC

Edited by INFINEON Technologies AI PS DD HV3, L 7302-S, Edition 2, 28.11.2003

IGBT Chip in NPT-technology

This chip is used for:

•

IGBT Modules

FEATURES:

•

600V NPT technology

•

100µm chip

•

positive temperature coefficient

•

easy paralleling

Applications:

•

drives

G

C

E

Chip Type

Die Size

Package

Ordering Code

SIGC11T60SNC

600V

10A

3.25 x 3.25 mm

2

sawn on foil

Q67050-A4155-

A001

MECHANICAL PARAMETER:

Raster size

3.25 x 3.25

Area total / active

10.56 / 7.4

Emitter pad size

2 x 1.6

Gate pad size

1.08 x 0.68

mm

2

Thickness

100

µm

Wafer size

150

mm

Flat position

270

deg

Max.possible chips per wafer

1414

Passivation frontside

Photoimide

Emitter metallization

3200 nm Al Si 1%

Collector metallization

1400 nm Ni Ag –system

suitable for epoxy and soft solder die bonding

Die bond

electrically conductive glue or solder

Wire bond

Al,

≤500µm

Reject Ink Dot Size

∅ 0.65mm ; max 1.2mm

Recommended Storage Environment

store in original container, in dry nitrogen,

< 6 month at an ambient temperature of 23°C