SIDC46D170H datasheet(2/4 Pages) INFINEON

Part #	SIDC46D170H

Description	Fast switching diode chip in EMCON 3 -Technology

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Manufacturer	INFINEON [Infineon Technologies AG]

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SIDC46D170H

Edited by INFINEON Technologies AI DP PSD CLS, L 4471A, Edition 2, 2.11.2004

Maximum Ratings

Parameter

Symbol

Condition

Value

Unit

Repetitive peak reverse voltage

V RRM

1700

V

Continuous forward current limited by

Tjmax

I F

75

Single pulse forward current

(depending on wire bond configuration)

I FSM

tP = 10 ms sinusoidal

430

Maximum repetitive forward current

limited by Tjmax

I FRM

150

A

Operating junction and storage

temperature

Tj , Tstg

-55...+150

°C

Static Electrical Characteristics (tested on chip), Tj=25 °C, unless otherwise specified

Value

Parameter

Symbol

Conditions

min.

Typ.

max.

Unit

Reverse leakage current

I R

V R=1700V

Tj=25 ° C

27

µA

Cathode-Anode

breakdown Voltage

V Br

I R=0.25mA

Tj=25°C

1700

V

Forward voltage drop

V F

I F=75A

Tj=25 ° C

1.8

V

Dynamic Electrical Characteristics, at Tj = 25 °C, unless otherwise specified, tested at component

Value

Parameter

Symbol

Conditions

min.

Typ.

max.

Unit

I RRM1

Tj = 25 °C

93

Peak recovery current

I RRM2

IF=75A

di/dt=920 A/

µs

VR=900 V

Tj = 125 °C

100

A

Qrr1

Tj=25 ° C

20.0

Reverse recovery charge

Qrr2

IF=75A

di/dt=920 A/

µs

VR=900 V

Tj=125 ° C

31.7

µC

E rec 1

Tj= 25 ° C

10.0

Reverse recovery energy

E rec2

IF=75A

di/dt=920 A/

µs

VR=900 V

Tj=125 ° C

18.3

mJ

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