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SGB15N60HS Datasheet(PDF) 10 Page - Infineon Technologies AG |
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SGB15N60HS Datasheet(HTML) 10 Page - Infineon Technologies AG |
10 / 11 page SGB15N60HS ^ Power Semiconductors 10 Rev 2.3 Oct 06 Figure A. Definition of switching times Figure B. Definition of switching losses I rr m 90% I rr m 10% I rr m di /dt F t rr I F i,v t Q S Q F t S t F V R di /dt rr Q=Q Q rr S F + t=t t rr S F + Figure C. Definition of diodes switching characteristics p(t) 12 n T(t) j τ1 1 τ2 2 n n τ TC rr r r r r Figure D. Thermal equivalent circuit Figure E. Dynamic test circuit Leakage inductance Lσ =60nH and Stray capacity Cσ =40pF. Published by |
Similar Part No. - SGB15N60HS_06 |
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Similar Description - SGB15N60HS_06 |
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