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SGB15N60 Datasheet(PDF) 3 Page - Infineon Technologies AG |
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SGB15N60 Datasheet(HTML) 3 Page - Infineon Technologies AG |
3 / 11 page SGB15N60 3 Rev.2.3 Nov 06 Switching Characteristic, Inductive Load, at Tj=25 °C Value Parameter Symbol Conditions min. typ. max. Unit IGBT Characteristic Turn-on delay time td(on) - 32 38 Rise time tr - 23 28 Turn-off delay time td(off) - 234 281 Fall time tf - 46 55 ns Turn-on energy Eon - 0.30 0.36 Turn-off energy Eoff - 0.27 0.35 Total switching energy Ets Tj=25°C, VCC=400V,IC=15A, VGE=0/15V, RG=21Ω, Lσ 1) =180nH, Cσ 1) =250pF Energy losses include “tail” and diode reverse recovery. - 0.57 0.71 mJ Switching Characteristic, Inductive Load, at Tj=150 °C Value Parameter Symbol Conditions min. typ. max. Unit IGBT Characteristic Turn-on delay time td(on) - 31 38 Rise time tr - 23 28 Turn-off delay time td(off) - 261 313 Fall time tf - 54 65 ns Turn-on energy Eon - 0.45 0.54 Turn-off energy Eoff - 0.41 0.53 Total switching energy Ets Tj=150°C VCC=400V,IC=15A, Lσ 1) =180nH, Cσ 1) =250pF VGE=0/15V, RG=21Ω Energy losses include “tail” and diode reverse recovery. - 0.86 1.07 mJ 1) Leakage inductance Lσ and Stray capacity Cσ due to dynamic test circuit in Figure E. |
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