PTFB213004F datasheet(5/16 Pages) INFINEON

Part #	PTFB213004F

Description	High Power RF LDMOS Field Effect Transistor 300 W, 2110-2170 MHz

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Manufacturer	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

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5 / 16 page

Data Sheet

5 of 16

Rev. 05.2, 2010-12-09

PTFB213004F

Confidential, Limited Internal Distribution

-80

-60

-40

-20

0

20

40

60

0

5

10

15

20

36

40

44

48

52

56

Output Power, avg. (dBm)

Output PAR Compression (PARC),

2140 MHz

VDD = 30 V, IDQ = 2.4 A, ƒ = 2140 MHz,

single-carrier 3GPP WCDMA signal,

input PAR = 7.5 dB, 3.84 MHz BW

Gain

Efficiency

PARC @ .01% CCDF

ACP

-80

-60

-40

-20

0

20

40

60

0

5

10

15

20

36

40

44

48

52

56

Output Power, avg. (dBm)

Output PAR Compression (PARC),

2170 MHz

VDD = 30 V, IDQ = 2.4 A, ƒ = 2170 MHz,

single-carrier 3GPP WCDMA signal,

input PAR = 7.5 dB, 3.84 MHz BW

Gain

Efficiency

PARC @ .01% CCDF

ACP

-65

-55

-45

-35

-25

-15

0

10

20

30

40

50

60

70

80

Tone Spacing (MHz)

Intermodulation Distortion vs.

Tone Spacing

VDD = 30 V, IDQ = 2.4 A, ƒ = 2140 MHz,

POUT = 251 W (PEP)

IM5

IM7

IM3

-75

-65

-55

-45

-35

-25

-15

39

43

47

51

55

Output Power, Avg. (dBm)

Two-tone IMD vs. Output Power

VDD = 30 V, IDQ = 2.4 A,

ƒ1 = 2170 MHz, ƒ2 = 2169 MHz

3rd Order

5th

7th

Typical Performance (cont.)

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