PTFB082817FH datasheet(8/13 Pages) INFINEON

Part #	PTFB082817FH

Description	Thermally-Enhanced High Power RF LDMOS FET 280 W, 30 V, 791-821 MHz

Download	13 Pages

Scroll/Zoom	100%

Manufacturer	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

Logo

8 / 13 page

Data Sheet

8 of 13

Rev. 02, 2010-12-13

PTFB082817FH

Confidential, Limited Internal Distribution

Reference Circuit (cont.)

Description

DUT

PTFB082817FH

PCB

0.508 mm [.020"] thick, er = 3.48, Rogers 4350, 1 oz. copper

Electrical Characteristics at 821 MHz

Transmission

Electrical

Dimensions: mm

Dimensions: mils

Line

Characteristics

Input

TL101

0.005 λ, 51.46 W

W = 1.105, L = 1.168

W = 44, L = 46

TL102

0.008 λ, 51.46 W

W1 = 1.105, W2 = 1.105, W3 = 1.778

W1 = 44, W2 = 44, W3 = 70

TL103

W1 = 17.780, W2 = 1.778, W3 = 17.780,

W1 = 700, W2 = 70, W3 = 700,

W4 = 2.032

W4 = 80

TL104, TL105, TL106,

W = 1.105

W = 44

TL107

TL108, TL109, TL110,

W = 0.762

W = 30

TL111, TL131

TL112

0.004 λ, 5.33 W

W1 = 17.780, W2 = 17.780, W3 = 0.762

W1 = 700, W2 = 700, W3 = 30

TL113

W1 = 17.780, W2 = 12.700

W1 = 700, W2 = 500

TL114

W1 = 1.676, W2 = 17.780

W1 = 66, W2 = 700

TL115

0.002 λ, 63.89 W

W = 0.762, L = 0.508

W = 30, L = 20

TL116

0.043 λ, 5.33 W

W = 17.780, L = 8.636

W = 700, L = 340

TL117

0.036 λ, 51.46 W

W = 1.105, L = 8.001

W = 44, L = 315

TL118

0.007 λ, 39.10 W

W = 1.676, L = 1.511

W = 66, L = 60

TL119

0.023 λ, 51.46 W

W = 1.105, L = 5.055

W = 44, L = 199

TL120

0.006 λ, 63.89 W

W = 0.762, L = 1.270

W = 30, L = 50

TL121

0.054 λ, 39.10 W

W = 1.676, L = 11.722

W = 66, L = 462

TL122

0.013 λ, 63.89 W

W = 0.762, L = 2.921

W = 30, L = 115

TL123

0.085 λ, 63.89 W

W = 0.762, L = 19.050

W = 30, L = 750

TL124

0.005 λ, 51.46 W

W = 1.105, L = 1.016

W = 44, L = 40

TL125

0.002 λ, 63.89 W

W = 0.762, L = 0.559

W = 30, L = 22

TL126

0.006 λ, 26.81 W

W = 2.794, L = 1.270

W = 110, L = 50

TL127

0.038 λ, 5.33 W

W = 17.780, L = 7.645

W = 700, L = 301

TL128

0.034 λ, 51.46 W

W = 1.105, L = 7.574

W = 44, L = 298

TL129

0.001 λ, 26.81 W

W = 2.794, L = 0.254

W = 110, L = 10

TL130

0.006 λ, 39.10 W

W = 1.676, L = 1.270

W = 66, L = 50

TL132

W1 = 1.676, W2 = 1.105

W1 = 66, W2 = 44

TL133

0.009 λ, 39.10 W

W1 = 1.676, W2 = 1.676, W3 = 2.032

W1 = 66, W2 = 66, W3 = 80

TL134, TL135, TL136, 0.012 λ, 26.81 W

W1 = 2.794, W2 = 2.794, W3 = 2.540

W1 = 110, W2 = 110, W3 = 100

TL137

TL138, TL139

0.010 λ, 26.81 W

W1 = 2.794, W2 = 2.794, W3 = 2.032

W1 = 110, W2 = 110, W3 = 80

TL140

0.009 λ, 63.89 W

W1 = 0.762, W2 = 0.762, W3 = 2.032

W1 = 30, W2 = 30, W3 = 80

TL141

0.011 λ, 63.89 W

W = 0.762, L = 2.492

W = 30, L = 98

TL142

0.010 λ, 5.33 W

W1 = 17.780, W2 = 17.780, W3 = 2.032

W1 = 700, W2 = 700, W3 = 80

Similar Part No. - PTFB082817FH

Manufacturer	Part #	Datasheet	Description
Infineon Technologies A...	PTFB072707FH	917Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET Rev. 02.1, 2016-06-15
Cree, Inc	PTFB072707FH	699Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 270 W, 28 V, 728 ??768 MHz
Infineon Technologies A...	PTFB072707FHV1R0	917Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET Rev. 02.1, 2016-06-15
	PTFB072707FHV1R0XTMA1	917Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET Rev. 02.1, 2016-06-15
	PTFB072707FHV1R250	917Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET Rev. 02.1, 2016-06-15

More results

Similar Description - PTFB082817FH

Manufacturer	Part #	Datasheet	Description
Infineon Technologies A...	PTVA082407NF	453Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 240 W, 48 V, 746 ??821 MHz Rev. 02.5, 2017-07-18
Cree, Inc	PTVA082407NF	639Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 240 W, 48 V, 746 ??821 MHz
Cree, Inc	PTRA084808NF	649Kb / 12P	Thermally-Enhanced High Power RF LDMOS FET 550 W, 48 V, 734 ??821 MHz
WOLFSPEED, INC.	PTRA084808NF	881Kb / 12P	Thermally-Enhanced High Power RF LDMOS FET 550 W, 48 V, 734 – 821 MHz Rev. 03.4, 2022-1-27
WOLFSPEED, INC.	PTVA082407NF	733Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 240 W, 48 V, 746 – 821 MHz Rev. 04.1, 2022-02-13
Infineon Technologies A...	PTFC262808SV	180Kb / 8P	Thermally-Enhanced High Power RF LDMOS FET 280 W, 28 V, 2620 ??2690 MHz Rev. 02.1, 2013-08-02
	PTRA082808NF	534Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 280 W, 48 V, 790 ??820 MHz Rev. 04.1, 2018-01-30
	PTFC262808FV	1Mb / 8P	Thermally-Enhanced High Power RF LDMOS FET 280 W, 28 V, 2620 ??2690 MHz Rev. 03, 2016-06-22
WOLFSPEED, INC.	PTRA082808NF	677Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 280 W, 48 V, 790 – 820 MHz Rev. 06.2, 2022-1-27
Cree, Inc	PTFC262808FV	806Kb / 8P	Thermally-Enhanced High Power RF LDMOS FET 280 W, 28 V, 2620 ??2690 MHz

More results

PTFB082817FH Datasheet(PDF) 8 Page - Infineon Technologies AG

PTFB082817FH Datasheet(HTML) 8 Page - Infineon Technologies AG

Similar Part No. - PTFB082817FH

Similar Description - PTFB082817FH

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13

Datasheet Download

Link URL