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PTFA211801E Datasheet(PDF) 1 Page - Infineon Technologies AG

Part # PTFA211801E
Description  Thermally-Enhanced High Power RF LDMOS FET 180 W, 2110-2170 MHz
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

PTFA211801E Datasheet(HTML) 1 Page - Infineon Technologies AG

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All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 9
Rev. 06, 2011-01-11
PTFA211801E
Confidential, Limited Internal Distribution
RF Characteristics
WCDMA Measurements (tested in Infineon test fixture)
VDD = 28 V, IDQ = 1.2 A, POUT = 35 W average, ƒ1 = 2135 MHz, ƒ2 = 2145 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,
peak/average = 8 dB @ 0.01% CCDF
Characteristic
Symbol
Min
Typ
Max
Unit
Gain
Gps
14.5
15.5
dB
Drain Efficiency
hD
26
27.5
%
Intermodulation Distortion
IMD
–36
–34
dBc
Thermally-Enhanced High Power RF LDMOS FET
180 W, 2110 – 2170 MHz
Description
The PTFA211801E is a thermally-enhanced, 180-watt, internally
matched LDMOS FET intended for WCDMA applications. It is
characaterized for single- and two-carrier WCDMA operation from
2110 to 2170 MHz. Manufactured with Infineon's advanced LDMOS
process, this device provides excellent thermal performance and
superior reliability.
Features
• Broadband internal matching
• Typical two-carrier WCDMA performance at 2140
MHz, 28 V
- Average output power = 45.5 dBm
- Linear Gain = 15.5 dB
- Efficiency = 27.5%
- Intermodulation distortion = –36 dBc
- Adjacent channel power = –41 dBc
• Typical CW performance, 2170 MHz, 30 V
- Output power at P1dB = 180 W
- Efficiency = 52%
• Integrated ESD protection
• Excellent thermal stability, low HCI drift
• Capable of handling 10:1 VSWR @ 28 V,
150 W (CW) output power
• Pb-free and RoHS-compliant
PTFA211801E
Package H-36260-2
0
5
10
15
20
25
30
-55
-50
-45
-40
-35
-30
-25
34
36
38
40
42
44
46
48
Average Output Power (dBm)
Two-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 1.2 A, ƒ = 2140 MHz,
3GPP WCDMA signal, PAR = 8 dB,
10 MHz carrier spacing
ACPR
Efficiency
IM3


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