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PTFA211801E Datasheet(PDF) 1 Page - Infineon Technologies AG |
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PTFA211801E Datasheet(HTML) 1 Page - Infineon Technologies AG |
1 / 9 page All published data at TCASE = 25°C unless otherwise indicated ESD: Electrostatic discharge sensitive device—observe handling precautions! Data Sheet 1 of 9 Rev. 06, 2011-01-11 PTFA211801E Confidential, Limited Internal Distribution RF Characteristics WCDMA Measurements (tested in Infineon test fixture) VDD = 28 V, IDQ = 1.2 A, POUT = 35 W average, ƒ1 = 2135 MHz, ƒ2 = 2145 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 8 dB @ 0.01% CCDF Characteristic Symbol Min Typ Max Unit Gain Gps 14.5 15.5 — dB Drain Efficiency hD 26 27.5 — % Intermodulation Distortion IMD — –36 –34 dBc Thermally-Enhanced High Power RF LDMOS FET 180 W, 2110 – 2170 MHz Description The PTFA211801E is a thermally-enhanced, 180-watt, internally matched LDMOS FET intended for WCDMA applications. It is characaterized for single- and two-carrier WCDMA operation from 2110 to 2170 MHz. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Features • Broadband internal matching • Typical two-carrier WCDMA performance at 2140 MHz, 28 V - Average output power = 45.5 dBm - Linear Gain = 15.5 dB - Efficiency = 27.5% - Intermodulation distortion = –36 dBc - Adjacent channel power = –41 dBc • Typical CW performance, 2170 MHz, 30 V - Output power at P1dB = 180 W - Efficiency = 52% • Integrated ESD protection • Excellent thermal stability, low HCI drift • Capable of handling 10:1 VSWR @ 28 V, 150 W (CW) output power • Pb-free and RoHS-compliant PTFA211801E Package H-36260-2 0 5 10 15 20 25 30 -55 -50 -45 -40 -35 -30 -25 34 36 38 40 42 44 46 48 Average Output Power (dBm) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 1.2 A, ƒ = 2140 MHz, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing ACPR Efficiency IM3 |
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