IPP057N08N3G datasheet(3/11 Pages) INFINEON

Part #	IPP057N08N3G

Description	OptiMOS3 Power-Transistor

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Manufacturer	INFINEON [Infineon Technologies AG]

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IPP057N08N3 G IPI057N08N3 G

IPB054N08N3 G

Parameter

Symbol Conditions

Unit

min.

typ.

max.

Dynamic characteristics

#>@ED3 1@13 9

D

1>3 5

C U__

%

+-/(

,/-(

\<

( ED

@ED3 1@13 9

D

1>3 5

C [__

%

1.+

)*0(

+ 5F5B

C5 D

B

1>C65B3 1@13 9

D

1>3 5

C ^__

%

+.

-,

-EB

>? > 45<1I D

9

=5

t P"[Z#

%

)0

%

Z_

+ 9

C5 D

9

=5

t ^

%

..

%

-EB

>? 6645<1I D

9

=5

t P"[RR#

%

+0

%

1<<D

9

=5

t R

%

)(

%

!1D

5 81B

S5 81B

13 D

5B

9

CD

9

3 C

,#

!1D

5 D

? C? EB

3 5 3 81B

75

Q S_

%

)1

*-

Z8

!1D

5 D

? 4B

19

> 3 81B

75

Q SP

%

))

).

, G9

D

3 89

>7 3 81B

75

Q _c

%

)1

*/

!1D

5 3 81B

75 D

? D

1<

Q S

%

-*

.1

!1D

5 @<1D

51E F? <D

175

V \XM`QMa

%

-&*

%

J

( ED

@ED3 81B

75

Q [__

V 99 . V =H .

%

/(

1+

Z8

Reverse Diode

9

? 45 3 ? >D

9

>? EC6? B

G1B

4 3 EB

B

5>D

I H

%

0(

6

9

? 45 @E<C5 3 EB

B

5>D

I H$\aX_Q

%

+*(

9

? 45 6? B

G1B

4 F? <D

175

V H9

V =H . I <

T V T

%

)&(

)&*

J

+ 5F5B

C5 B

53 ? F5B

I D

9

=5

t ^^

%

/*

%

Z_

+ 5F5B

C5 B

53 ? F5B

I 3 81B

75

Q ^^

%

)+(

%

Z8

,# ,55 697EB5 6? B71D5 3 81B75 @1B1=5D5B4569>9D9?>

V G . I <4I H

Pi <'Pt V C

T 8 T

Values

V =H . V 9H .

f

& " J

V 99 . V =H .

I 9 R = "

V 99 . I 9

V =H D? .

+ 5F

@175

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