IPL60R299CP datasheet(5/13 Pages) INFINEON

Part #	IPL60R299CP

Description	600V CoolMOS CP Power Transistor

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Manufacturer	INFINEON [Infineon Technologies AG]

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600V CoolMOS™ CP Power Transistor

IPL60R299CP

Electrical characteristics

Final Data Sheet

5

Rev. 2.0, 2010-10-01

4

Electrical characteristics

Electrical characteristics, at

Tj=25 °C, unless otherwise specified.

Table 4

Static characteristics

Parameter

Symbol

Values

Unit

Note / Test Condition

Min.

Typ.

Max.

Drain-source breakdown voltage

V

(BR)DSS

600

-

V

GS=0 V, ID=0.25 mA

Gate threshold voltage

V

GS(th)

2.5

3

3.5

V

DS=VGS, ID=0.44 mA

Zero gate voltage drain current

I

DSS

--

1

µA

V

DS=600 V, VGS=0 V,

T

j=25 °C

-10

-

V

DS=600 V, VGS=0 V,

T

j=150 °C

Gate-source leakage current

I

GSS

-

100

nA

V

GS=20 V, VDS=0 V

Drain-source on-state resistance

R

DS(on)

-

0.27

0.299



V

GS=10 V, ID=6.6 A,

T

j=25 °C

-0.70

-

V

GS=10 V, ID=6.6 A,

T

j=150 °C

Gate resistance

R

G

-1.9

-



f=1 MHz, open drain

Table 5

Dynamic characteristics

Parameter

Symbol

Values

Unit

Note /

Test Condition

Min.

Typ.

Max.

Input capacitance

C

iss

-1100

-

pF

V

GS=0 V, VDS=100 V,

f=1 MHz

Output capacitance

C

oss

-60

-

Effective output capacitance,

energy related1)

1)

C

o(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS

C

o(er)

-46

-

V

GS=0 V,

V

DS=0...480 V

Effective output capacitance, time

related2)

2)

C

o(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS

C

o(tr)

-120

-

I

D=constant, VGS=0 V

V

DS=0...480V

Turn-on delay time

t

d(on)

-10

-

ns

V

DD=400 V,

V

GS=13 V, ID=6.6 A,

R

G=4.3 

see table 16)

Rise time

t

r

-5

-

Turn-off delay time

t

d(off)

-40

-

Fall time

t

f

-5

-

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