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IPB80N04S4L-04 Datasheet(PDF) 2 Page - Infineon Technologies AG |
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IPB80N04S4L-04 Datasheet(HTML) 2 Page - Infineon Technologies AG |
2 / 9 page IPB80N04S4L-04 IPI80N04S4L-04, IPP80N04S4L-04 Parameter Symbol Conditions Unit min. typ. max. Thermal resistance, junction - case R thJC - - - 2.1 K/W Thermal resistance, junction - ambient, leaded R thJA -- - 62 SMD version, device on PCB R thJA minimal footprint - - 62 6 cm 2 cooling area3) -- 40 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0V, I D= 1mA 40 - - V Gate threshold voltage V GS(th) V DS=V GS, I D=35µA 1.2 1.7 2.2 Zero gate voltage drain current I DSS V DS=40V, V GS=0V - 0.02 1 µA V DS=18V, V GS=0V, T j=85°C 2) -1 20 Gate-source leakage current I GSS V GS=20V, V DS=0V - - 100 nA Drain-source on-state resistance R DS(on) V GS=4.5V, I D=40A - 5.1 6 m Ω V GS=4.5V, I D=40A, SMD version - 4.8 5.7 V GS=10 V, I D=80 A - 3.7 4.3 V GS=10 V, I D=80 A, SMD version - 3.4 4.0 Values Rev. 1.0 page 2 2010-04-13 |
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