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IPI80N04S3-04 Datasheet(PDF) 2 Page - Infineon Technologies AG |
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IPI80N04S3-04 Datasheet(HTML) 2 Page - Infineon Technologies AG |
2 / 9 page IPB80N04S3-04 IPI80N04S3-04, IPP80N04S3-04 Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics 2) Thermal resistance, junction - case R thJC - - 1.1 K/W Thermal resistance, junction - ambient, leaded R thJA -- 62 SMD version, device on PCB R thJA minimal footprint - - 62 6 cm 2 cooling area3) -- 40 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D= 1 mA 40 - - V Gate threshold voltage V GS(th) V DS=V GS, I D=90 µA 2.1 3.0 4.0 Zero gate voltage drain current I DSS V DS=40 V, V GS=0 V, T j=25 °C -- 1 µA V DS=40 V, V GS=0 V, T j=125 °C 2) - - 100 Gate-source leakage current I GSS V GS=20 V, V DS=0 V - - 100 nA Drain-source on-state resistance RDS(on) V GS=10 V, I D=80 A - 3.5 4.1 mΩ V GS=10 V, I D=80 A, SMD version - 3.2 3.8 Values Rev. 1.0 page 2 2007-05-03 |
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