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TCA355G Datasheet(PDF) 7 Page - Siemens Semiconductor Group |
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TCA355G Datasheet(HTML) 7 Page - Siemens Semiconductor Group |
7 / 7 page Semiconductor Group 7 TCA 305 TCA 355 L0, C0 Resonant circuit RHy Hysteresis adjustment RDi Distance adjustment D Temperature compensation of the resonant circuit; possibly with series resistance for the purpose of adjustment. The diode is not absolutely necessary. Whether it is used or not depends on the temperature coefficient of the resonant circuit. RI; CI Integration element. At pin 3 (integrating capacitance) we recommend a capacitor of typ. 1 nF. To increase noise immunity this capacitor can be substituted by an RC circuit with, e.g., RI = 1 M and CI = 10 nF. CD Delay capacitor Dimensioning Examples in Accordance with CENELEC Standard (flush) Ω M 12 M 18 M 30 Ferrite pot core Number of turns Cross section of wire L0 C0 (STYROFLEX®) fOSC Sn RA (Metal) CD M 33 (7.35 × 3.6) mm 100 0.1 CuL 206 µH 1000 pF appr. 350 kHz 4 mm 8.2 k + 330 100 nF Ω Ω N 22 (14.4 × 7.5) mm 80 20 × 0.05 268 µH 1.2 nF appr. 280 kHz 8 mm 33 k 100 nF Ω N 22 (25 × 8.9) mm 100 10 × 0.1 585 µH 3.3 nF appr. 115 kHz 15 mm 22 k + 2.7 k 100 nF Ω Ω |
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