NCP700BSN18T1G datasheet(9/21 Pages) ONSEMI

Part #	NCP700BSN18T1G

Description	200 mA, Ultra Low Noise, High PSRR, BiCMOS RF LDO Regulator

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Manufacturer	ONSEMI [ON Semiconductor]

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NCP700B

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TYPICAL CHARACTERISTICS

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Figure 22. Output Noise vs. Noise Bypass

Capacitance, COUT = 1 mF, VOUT = 3.3 V, IOUT =

200 mA

Cnoise, NOISE BYPASS CAPACITOR (nF)

TA = 25°C,

COUT = 1 mF,

VOUT = 3.3 V,

IOUT = 200 mA

VIN = 3.8 V

Figure 23. Output Noise vs. Output

Capacitance, Cnoise = 100 nF, VOUT = 3.3 V,

IOUT = 200 mA

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13579

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COUT, OUTPUT CAPACITOR (mF)

TA = 25°C,

Cnoise = 100 nF,

VOUT = 3.3 V,

IOUT = 200 mA

VIN = 3.8 V

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IOUT, OUTPUT CURRENT (mA)

Figure 24. Output Noise vs. Load Current,

Cnoise = 10 nF, COUT = 1 mF

VOUT = 3.3 V

VOUT = 2.8 V

VOUT = 1.8 V

TA = 25°C, Cnoise = 10 nF, COUT = 1 mF,

VIN = VOUT + 0.5 V or 2.5 V, whichever is high-

er

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IOUT, OUTPUT CURRENT (mA)

Figure 25. Output Noise vs. Load Current,

Cnoise = 100 nF, COUT = 1 mF

TA = 25°C, Cnoise = 100 nF, COUT = 1 mF,

VIN = VOUT + 0.5 V or 2.5 V, whichever is high-

er

VOUT = 3.3 V

VOUT = 2.8 V

VOUT = 1.8 V

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t, TIME (ms)

Figure 26. Load Transient Response, VOUT =

1.8 V, COUT = 4.7 mF, Cnoise = 100 nF

1 mA

200 mA

COUT = 4.7 mF, VIN = 2.5 V, Cnoise = 100 nF,

dIOUT/dt = 200 mA / 1 ms

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NCP700BSN18T1G Datasheet(PDF) 9 Page - ON Semiconductor

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