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IPI100N10S3-05 Datasheet(PDF) 7 Page - Infineon Technologies AG |
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IPI100N10S3-05 Datasheet(HTML) 7 Page - Infineon Technologies AG |
7 / 9 page IPB100N10S3-05 IPI100N10S3-05, IPP100N10S3-05 13 Typical avalanche energy 14 Typ. drain-source breakdown voltage E AS = f(T j) V BR(DSS) = f(T j); I D = 1 mA parameter: I D 15 Typ. gate charge 16 Gate charge waveforms V GS = f(Q gate); I D = 100 A pulsed parameter: V DD V GS Q gate V gs(th) Q g(th) Q gs Q gd Q sw Q g 90 95 100 105 110 115 -55 -15 25 65 105 145 T j [°C] 20 V 80 V 0 1 2 3 4 5 6 7 8 9 10 0 20 40 60 80 100 120 140 Q gate [nC] 100 A 50 A 25 A 0 500 1000 1500 2000 2500 3000 3500 25 75 125 175 T j [°C] Rev. 1.0 page 7 2008-02-11 |
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