Electronic Components Datasheet Search |
|
SEMIX604GB176HDS Datasheet(PDF) 2 Page - Semikron International |
|
SEMIX604GB176HDS Datasheet(HTML) 2 Page - Semikron International |
2 / 5 page SEMiX604GB176HDs 2 Rev. 2 – 23.03.2011 © by SEMIKRON Characteristics Symbol Conditions min. typ. max. Unit Inverse diode VF = VEC IF = 400 A VGE =0 V chip Tj =25 °C 1.5 1.70 V Tj =125 °C 1.4 1.6 V VF0 Tj =25 °C 0.9 1.1 1.3 V Tj =125 °C 0.7 0.9 1.1 V rF Tj =25 °C 1.0 1.0 1.0 m Tj =125 °C 1.3 1.3 1.3 m IRRM IF = 400 A di/dtoff =6600 A/µs VGE =-15 V VCC = 1200 V Tj =125 °C 560 A Qrr Tj =125 °C 131 µC Err Tj =125 °C 95 mJ Rth(j-c) per diode 0.081 K/W Module LCE 22 nH RCC'+EE' res., terminal-chip TC =25°C 0.7 m TC =125 °C 1m Rth(c-s) per module 0.03 K/W Ms to heat sink (M5) 3 5 Nm Mt to terminals (M6) 2.5 5 Nm Nm w 400 g Temperatur Sensor R100 Tc=100°C (R25=5 k) 493 ± 5% B100/125 R(T)=R100exp[B100/125(1/T-1/T100)]; T[K]; 3550 ±2% K SEMiX® 4s GB Trench IGBT Modules SEMiX604GB176HDs Features • Homogeneous Si • Trench = Trenchgate technology •VCE(sat) with positive temperature coefficient • UL recognised file no. E63532 Typical Applications* •AC inverter drives •UPS • Electronic welders |
Similar Part No. - SEMIX604GB176HDS |
|
Similar Description - SEMIX604GB176HDS |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |