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SEMIX604GB12E4S Datasheet(PDF) 1 Page - Semikron International

Part # SEMIX604GB12E4S
Description  Trench IGBT Modules
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Manufacturer  SEMIKRON [Semikron International]
Direct Link  http://www.semikron.com
Logo SEMIKRON - Semikron International

SEMIX604GB12E4S Datasheet(HTML) 1 Page - Semikron International

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SEMiX604GB12E4s
© by SEMIKRON
Rev. 0 – 05.05.2010
1
SEMiX® 4s
GB
Trench IGBT Modules
SEMiX604GB12E4s
Features
• Homogeneous Si
• Trench = Trenchgate technology
•VCE(sat) with positive temperature
coefficient
• High short circuit capability
• UL recognized, file no. E63532
Typical Applications*
• AC inverter drives
•UPS
• Electronic Welding
Remarks
• Case temperature limited to TC=125°C
max.
• Product reliability results are valid for
Tj=150°C
• Dynamic values apply to the
following combination of resistors:
RGon,main = 1,0 Ω
RGoff,main = 6,2 Ω
RG,X = 2,2 Ω
RE,X = 0,5 Ω
Absolute Maximum Ratings
Symbol
Conditions
Values
Unit
IGBT
VCES
1200
V
IC
Tj = 175 °C
Tc =25°C
916
A
Tc =80°C
704
A
ICnom
600
A
ICRM
ICRM = 3xICnom
1800
A
VGES
-20 ... 20
V
tpsc
VCC = 800 V
VGE ≤ 20 V
VCES ≤ 1200 V
Tj = 150 °C
10
µs
Tj
-40 ... 175
°C
Inverse diode
IF
Tj = 175 °C
Tc =25°C
707
A
Tc =80°C
529
A
IFnom
600
A
IFRM
IFRM = 3xIFnom
1800
A
IFSM
tp = 10 ms, sin 180°, Tj =25°C
3240
A
Tj
-40 ... 175
°C
Module
It(RMS)
600
A
Tstg
-40 ... 125
°C
Visol
AC sinus 50Hz, t = 1 min
4000
V
Characteristics
Symbol
Conditions
min.
typ.
max.
Unit
IGBT
VCE(sat)
IC =600 A
VGE =15V
chiplevel
Tj =25°C
1.8
2.05
V
Tj = 150 °C
2.2
2.4
V
VCE0
Tj =25°C
0.8
0.9
V
Tj = 150 °C
0.7
0.8
V
rCE
VGE =15V
Tj =25°C
1.7
1.9
mΩ
Tj = 150 °C
2.5
2.7
mΩ
VGE(th)
VGE=VCE, IC =24mA
5
5.8
6.5
V
ICES
VGE =0V
VCE = 1200 V
Tj =25°C
0.12
0.36
mA
Tj = 150 °C
mA
Cies
VCE =25 V
VGE =0V
f=1MHz
37.2
nF
Coes
f=1MHz
2.32
nF
Cres
f=1MHz
2.04
nF
QG
VGE =- 8 V...+ 15 V
3400
nC
RGint
Tj =25°C
1.25
td(on)
VCC = 600 V
IC =600 A
RG on =1.7 Ω
RG off =6.9 Ω
di/dton = 7100 A/µs
di/dtoff = 6350 A/µs
Tj = 150 °C
374
ns
tr
Tj = 150 °C
85
ns
Eon
Tj = 150 °C
35
mJ
td(off)
Tj = 150 °C
1277
ns
tf
Tj = 150 °C
114
ns
Eoff
Tj = 150 °C
110.4
mJ
Rth(j-c)
per IGBT
0.049
K/W


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