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SEMIX453GB176HDS Datasheet(PDF) 1 Page - Semikron International

Part # SEMIX453GB176HDS
Description  Trench IGBT Modules
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Manufacturer  SEMIKRON [Semikron International]
Direct Link  http://www.semikron.com
Logo SEMIKRON - Semikron International

SEMIX453GB176HDS Datasheet(HTML) 1 Page - Semikron International

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SEMiX453GB176HDs
© by SEMIKRON
Rev. 1 – 24.06.2010
1
SEMiX® 3s
GB
Trench IGBT Modules
SEMiX453GB176HDs
Features
• Homogeneous Si
• Trench = Trenchgate technology
•VCE(sat) with positive temperature
coefficient
• UL recognised file no. E63532
Typical Applications*
• AC inverter drives
•UPS
• Electronic welders
Absolute Maximum Ratings
Symbol
Conditions
Values
Unit
IGBT
VCES
1700
V
IC
Tj = 150 °C
Tc =25°C
444
A
Tc =80°C
315
A
ICnom
300
A
ICRM
ICRM = 2xICnom
600
A
VGES
-20 ... 20
V
tpsc
VCC = 1000 V
VGE ≤ 20 V
VCES ≤ 1700 V
Tj = 125 °C
10
µs
Tj
-55 ... 150
°C
Inverse diode
IF
Tj = 150 °C
Tc =25°C
545
A
Tc =80°C
365
A
IFnom
300
A
IFRM
IFRM = 2xIFnom
600
A
IFSM
tp = 10 ms, sin 180°, Tj =25°C
2900
A
Tj
-40 ... 150
°C
Module
It(RMS)
600
A
Tstg
-40 ... 125
°C
Visol
AC sinus 50Hz, t = 1 min
4000
V
Characteristics
Symbol
Conditions
min.
typ.
max.
Unit
IGBT
VCE(sat)
IC =300 A
VGE =15V
chiplevel
Tj =25°C
22.45
V
Tj = 125 °C
2.45
2.9
V
VCE0
Tj =25°C
11.2
V
Tj = 125 °C
0.9
1.1
V
rCE
VGE =15V
Tj =25°C
3.3
4.2
mΩ
Tj = 125 °C
5.2
6.0
mΩ
VGE(th)
VGE=VCE, IC = 12 mA
5.2
5.8
6.4
V
ICES
VGE =0V
VCE = 1700 V
Tj =25°C
3mA
Tj = 125 °C
mA
Cies
VCE =25 V
VGE =0V
f=1MHz
26.4
nF
Coes
f=1MHz
1.10
nF
Cres
f=1MHz
0.88
nF
QG
VGE =- 8 V...+ 15 V
2799
nC
RGint
Tj =25°C
2.50
td(on)
VCC = 1200 V
IC =300 A
RG on =4.3 Ω
RG off =4.3 Ω
Tj = 125 °C
335
ns
tr
Tj = 125 °C
70
ns
Eon
Tj = 125 °C
215
mJ
td(off)
Tj = 125 °C
990
ns
tf
Tj = 125 °C
150
ns
Eoff
Tj = 125 °C
125
mJ
Rth(j-c)
per IGBT
0.071
K/W


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