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SEMIX453GB12VS Datasheet(PDF) 1 Page - Semikron International

Part # SEMIX453GB12VS
Description  Trench IGBT Modules
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Manufacturer  SEMIKRON [Semikron International]
Direct Link  http://www.semikron.com
Logo SEMIKRON - Semikron International

SEMIX453GB12VS Datasheet(HTML) 1 Page - Semikron International

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SEMiX453GB12Vs
© by SEMIKRON
Rev. 2 – 16.02.2011
1
SEMiX® 3s
GB
SEMiX453GB12Vs
Features
• Homogeneous Si
•VCE(sat) with positive temperature
coefficient
• High short circuit capability
• UL recognised file no. E63532
Typical Applications*
•AC inverter drives
•UPS
• Electronic Welding
Remarks
• Case temperature limited to TC=125°C
max.
• Product reliability results are valid for
Tj=150°C
• Dynamic values apply to the
following combination of resistors:
RGon,main = 0,5 
RGoff,main = 0,5 
RG,X = 2,2 
RE,X = 0,5 
Absolute Maximum Ratings
Symbol Conditions
Values
Unit
IGBT
VCES
1200
V
IC
Tj = 175 °C
Tc =25 °C
673
A
Tc =80 °C
513
A
ICnom
450
A
ICRM
ICRM = 3xICnom
1350
A
VGES
-20 ... 20
V
tpsc
VCC = 600 V
VGE ≤ 15 V
VCES ≤ 1200 V
Tj =125 °C
10
µs
Tj
-40 ... 175
°C
Inverse diode
IF
Tj = 175 °C
Tc =25 °C
516
A
Tc =80 °C
385
A
IFnom
450
A
IFRM
IFRM = 3xIFnom
1350
A
IFSM
tp = 10 ms, sin 180°, Tj =25°C
2430
A
Tj
-40 ... 175
°C
Module
It(RMS)
Tterminal =80 °C
600
A
Tstg
-40 ... 125
°C
Visol
AC sinus 50Hz, t = 1 min
4000
V
Characteristics
Symbol Conditions
min.
typ.
max.
Unit
IGBT
VCE(sat)
IC =450 A
VGE =15 V
chiplevel
Tj =25 °C
1.75
2.2
V
Tj =150 °C
2.2
2.5
V
VCE0
Tj =25 °C
0.94
1.04
V
Tj =150 °C
0.88
0.98
V
rCE
VGE =15 V
Tj =25 °C
1.8
2.6
m
Tj =150 °C
2.9
3.4
m
VGE(th)
VGE=VCE, IC = 18 mA
5.5
6
6.5
V
ICES
VGE =0 V
VCE = 1200 V
Tj =25 °C
0.1
0.3
mA
Tj =150 °C
mA
Cies
VCE =25V
VGE =0 V
f=1MHz
27.0
nF
Coes
f=1MHz
2.66
nF
Cres
f=1MHz
2.65
nF
QG
VGE = - 8 V...+ 15 V
4950
nC
RGint
Tj =25°C
1.67
td(on)
VCC = 600 V
IC =450 A
VGE =±15 V
RG on =1.4 
RG off =1.4 
di/dton = 6400 A/µs
di/dtoff =4000 A/µs
du/dtoff = 6600 V/
µs
Tj =150 °C
470
ns
tr
Tj =150 °C
72
ns
Eon
Tj =150 °C
39.8
mJ
td(off)
Tj =150 °C
665
ns
tf
Tj =150 °C
109
ns
Eoff
Tj =150 °C
54.4
mJ
Rth(j-c)
per IGBT
0.067
K/W


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