2nd Generation thinQ!™ SiC Schottky Diode

IDY10S120

Final Data Sheet

2

Rev. 2.0, 2011-02-28

1

Description

The second generation of Infineon SiC Schottky diodes has emerged over the years as the

industry standard. The IDYxxS120 products are extending the already broad portfolio with

the new TO-247HC (high creepage) package.

The new package layout is fully compatible with the industry standard TO247, and can

therefore easily be placed in already existing designs, with no extra efforts.

The higher creepage distance increases the safety margin against the risk of short circuits,

especially arcing, which might be triggered by the presence of dust or dirt inside the system.

This reduces the need of additional chemical (silicone gel or creams) or mechanical (sheaths

or foils) solutions to lower the pollution level between the leads, with all consequent benefits

of a lean and faster manufacturing process

Features

•

Revolutionary semiconductor material - Silicon Carbide

•

Switching behavior benchmark

•

No reverse recovery/ No forward recovery

•

Temperature independent switching behavior

•

High surge current capability

•

Pb-free lead plating; RoHS compliant

•

•

Optimized for high temperature operation

Benefits

•

System efficiency improvement over Si diodes

•

System cost / size savings due to reduced cooling requirements

•

Enabling higher frequency / increased power density solutions

•

Higher system reliability due to lower operating temperatures and less fans

•

Package design with high creepage distance

•

Reduced EMI

Applications

•

Solar applications; UPS; Motor Drives;

•

SMPS e.g.; CCM PFC

1) J-STD20 and JESD22

Table 1

Key Performance Parameters

Parameter

Value

Unit

V

DC

1200

V

Q

C

14.4

nC

A

Table 2

Pin Definition

Pin 1

Pin2

Pin 3

AC

A

Type / Ordering Code

Package

Marking

Related Links

IDY10S120

PG-TO247HC-3

D10S120

IFX SiC Diodes Webpage