IDV05S60C datasheet(4/10 Pages) INFINEON

Part #	IDV05S60C

Description	2nd Generation thinQ! SiC Schottky Diode

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Manufacturer	INFINEON [Infineon Technologies AG]

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2nd Generation thinQ!™ SiC Schottky Diode

IDV05S60C

Maximum ratings

Final Data Sheet

4

Rev. 2.0, 2010-01-08

2

Maximum ratings

3

Thermal characteristics

Table 3

Maximum ratings

Parameter

Symbol

Values

Unit

Note / Test Condition

Min.

Typ.

Max.

Continuous forward current

I

F

--

5

A

T

C= < 100°C

Surge non-repetitive

I

F, SM

--

44

T

C= 25°C, tp = 10 ms

forward current, sine halfwave

-

39

T

C= 150°C, tp = 10 ms

Non-repetitive peak forward current

I

F, max

-

350

T

C= 25°C, tp = 10 µs

i² t value

∫i²dt

-

9

A²s

T

C= 25°C, tp = 10 ms

-6.5

T

C= 150°C, tp = 10 ms

Repetitive peak reverse voltage

V

RRM

-

600

V

T

j= 25°C

Diode dv/dt ruggedness

dv/dt

-

50

V/ns

V

R= 0...480 V

Power dissipation

P

tot

--

30

W

T

C= 25 °C

Operating and storage temperature

T

j; Tstg

- 55

-

175

°C

Mounting torque

-

50

Ncm

M2.5 screws

Table 4

Thermal characteristics TO-220 FullPAK

Parameter

Symbol

Values

Unit

Note /

Test Condition

Min.

Typ.

Max.

Thermal resistance, junction - case

R

thJC

--

5

K/W

Thermal resistance, junction -

ambient

R

thJA

-

62

leaded

Soldering temperature,

wavesoldering only allowed at

leads

T

sold

-

260

°C

1.6 mm (0.063 in.)

from case for 10 s

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