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SKCD81C060I3 Datasheet(PDF) 1 Page - Semikron International |
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SKCD81C060I3 Datasheet(HTML) 1 Page - Semikron International |
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1 / 2 page  SKCD 81 C 060 I3 © by SEMIKRON Rev. 0 – 18.02.2010 1 CAL-DIODE SKCD IF = 150 A VRRM = 600 V Size: 9 mm x 9 mm SKCD 81 C 060 I3 Features • low forward voltage drop combined with a low temperature dependence • easy paralleling due to a small forward voltage spread • very soft recovery behavior • small switching losses • high ruggedness • compatible to thick wire bonding • compatible to all standard solder processes Typical Applications* • freewheeling diode for IGBT Absolute Maximum Ratings Symbol Conditions Values Unit VRRM Tj =25°C, IR =0.3 mA 600 V IF(AV) Ts =80°C, Tj = 150 °C 120 A IFSM 10 ms sin 180° Tj =25°C 1550 A Tj = 150 °C 1260 A Tjmax 150 °C Electrical Characteristics Symbol Conditions min. typ. max. Unit i2t Tj = 150 °C, 10 ms, sin 180° 7938 A2s IR Tj =25°C, VRRM = 600 V 0.30 mA Tj = 125 °C, VRRM =600 V 8.00 mA VF Tj =25°C, IF = 155 A 1.35 1.60 V Tj = 125 °C, IF = 155 A 1.35 1.60 V V(TO) Tj = 125 °C 0.90 V rT Tj = 125 °C 2.7 mΩ Dynamic Characteristics Symbol Conditions min. typ. max. Unit trr Tj = 25 °C, 150 A, 300 V, 1000 A/µs µs trr Tj = 125 °C, 150 A, 300 V, 1000 A/µs ns Qrr Tj = 25 °C, 150 A, 300 V, 1000 A/µs µC Qrr Tj = 125 °C, 150 A, 300 V, 1000 A/µs 8.5 µC Irrm Tj = 25 °C, 150 A, 300 V, 1000 A/µs A Irrm Tj = 125 °C, 150 A, 300 V, 1000 A/µs 70 A Thermal Characteristics Symbol Conditions min. typ. max. Unit Tj -40 150 °C Tstg -40 150 °C Tsolder 10 min. 250 °C Tsolder 5 min. 320 °C Rth(j-s) sold. on 0,38 mm DCB, reference point on copper heatsink close to the chip 0.4 K/W Mechanical Characteristics Symbol Conditions Values Unit Raster size 9 x 9 mm2 Area total 81 mm2 Anode bondable (Al) Cathode solderable (Ag/Ni) Wire bond Al, diameter ≤ 500 µm Package wafer frame Chips / Package 116 (5" Wafer) pcs |
Similar Part No. - SKCD81C060I3_10 |
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Similar Description - SKCD81C060I3_10 |
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