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CDR33BX104AKWS Datasheet(PDF) 1 Page - Freescale Semiconductor, Inc |
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CDR33BX104AKWS Datasheet(HTML) 1 Page - Freescale Semiconductor, Inc |
1 / 13 page MRF6V13250HR3 MRF6V13250HSR3 1 RF Device Data Freescale Semiconductor RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs RF Power transistors designed for applications operating at 1300 MHz. These devices are suitable for use in pulsed and CW applications. • Typical Performance: VDD =50 Volts,IDQ = 100 mA Signal Type Pout (W) f (MHz) Gps (dB) ηD (%) IRL (dB) Pulsed (200 μsec, 10% Duty Cycle) 250 Peak 1300 22.7 57.0 --18 • Typical Performance: VDD =50 Volts,IDQ =10 mA, TC =25°C Signal Type Pout (W) f (MHz) Gps (dB) ηD (%) IRL (dB) CW 230 CW 1300 21.0 55.0 --17 • Capable of Handling a Load Mismatch of 10:1 VSWR, @ 50 Vdc, 1300 MHz at all Phase Angles • 250 Watts Pulsed Peak Power, 10% Duty Cycle, 200 μsec • CW Capable Features • Characterized with Series Equivalent Large--Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 50 VDD Operation • Characterized from 20 V to 50 V for Extended Power Range • Integrated ESD Protection • Greater Negative Gate--Source Voltage Range for Improved Class C Operation • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel. For R5 Tape and Reel options, see p. 12. Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage VDSS --0.5, +120 Vdc Gate--Source Voltage VGS --6.0, +10 Vdc Storage Temperature Range Tstg -- 65 to +150 °C Case Operating Temperature TC 150 °C Operating Junction Temperature (1,2) TJ 225 °C Total Device Dissipation @ TC =25°C Derate above 25°C PD 476 2.38 W W/°C Table 2. Thermal Characteristics Characteristic Symbol Value (2,3) Unit Thermal Resistance, Junction to Case Pulsed: Case Temperature 65°C, 250 W Pulsed, 200 μsec Pulse Width, 10% Duty Cycle, 50 Vdc, IDQ = 100 mA, 1300 MHz CW: Case Temperature 77°C, 235 W CW, 50 Vdc, IDQ = 10 mA, 1300 MHz ZθJC RθJC 0.07 0.42 °C/W 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. 1300 MHz, 250 W, 50 V LATERAL N--CHANNEL RF POWER MOSFETs MRF6V13250HR3 MRF6V13250HSR3 CASE 465--06, STYLE 1 NI--780 MRF6V13250HR3 CASE 465A--06, STYLE 1 NI--780S MRF6V13250HSR3 Document Number: MRF6V13250H Rev. 0, 6/2011 Freescale Semiconductor Technical Data © Freescale Semiconductor, Inc., 2011. All rights reserved. |
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