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IDT10S60C Datasheet(PDF) 1 Page - Infineon Technologies AG |
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IDT10S60C Datasheet(HTML) 1 Page - Infineon Technologies AG |
1 / 7 page IDT10S60C 2 nd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior • High surge current capability • Pb-free lead plating; RoHs compliant • Qualified according to JEDEC 1) for target applications • Breakdown voltage tested at 5mA 2) thinQ! 2G Diode specially designed for fast switching applications like: • CCM PFC • Motor Drives I F=5 A, T j=25 °C Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Unit Continuous forward current I F T C<140 °C 10 A RMS forward current I F,RMS f =50 Hz 15 Surge non-repetitive forward current, sine halfwave I F,SM T C=25 °C, t p=10 ms 84 Repetitive peak forward current I F,RM T j=150 °C, T C=100 °C, D =0.1 39 Non-repetitive peak forward current I F,max T C=25 °C, t p=10 µs 350 i²t value ∫i 2dt T C=25 °C, t p=10 ms 35 A 2s Repetitive peak reverse voltage V RRM 600 V Diode ruggedness dv/dt dv/ dt VR=0…480V 50 V/ns Power dissipation P tot T C=25 °C 100 W Operating and storage temperature T j, T stg -55 ... 175 °C Mounting torque M3 and M3.5 screws 60 Ncm Value V DC 600 V Q c 24 nC I F 10 A Product Summary PG-TO220-2-2 Type Package Marking Pin 1 Pin 2 IDT10S60C PG-TO220-2-2 D10S60C C A Rev. 2.1 page 1 2008-06-09 |
Similar Part No. - IDT10S60C_08 |
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Similar Description - IDT10S60C_08 |
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