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IDH12S60C Datasheet(PDF) 2 Page - Infineon Technologies AG

Part No. IDH12S60C
Description  2ndGeneration thinQ!TM SiC Schottky Diode
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

IDH12S60C Datasheet(HTML) 2 Page - Infineon Technologies AG

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IDH12S60C
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Thermal characteristics
Thermal resistance, junction - case
R thJC
-
-
1.3
K/W
Thermal resistance,
junction - ambient
R thJA
leaded
-
-
62
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
DC blocking voltage
V DC
I R=0.16 mA
600
-
-
V
Diode forward voltage
V F
I F=12 A, T j=25 °C
-
1.5
1.7
I F=12 A, T j=150 °C
-
1.7
2.1
Reverse current
I R
V R=600 V, T j=25 °C
-
1.6
160
µA
V R=600 V, T j=150 °C
-
6
1600
AC characteristics
Total capacitive charge
Q c
-30-
nC
Switching time
3)
t c
-
-
<10
ns
C
V R=1 V, f = MHz
-
530
-
pF
V R=300 V, f =1 MHz
-70-
V R=600 V, f =1 MHz
-70-
Values
V R=400 V,I F≤I F,max,
di F/dt =200 A/µs,
T j=150 °C
1) J-STD20 and JESD22
4) Only capacitive charge occuring, guaranteed by design.
2) All devices tested under avalanche conditions, for a time periode of 5ms, at 5mA.
3) t
c is the time constant for the capacitive displacement current waveform (independent from T j, ILOAD and
di/dt), different from trr, which is dependent on Tj, ILOAD, di/dt. No reverse recovery time constant trr due to
absence of minority carrier injection.
Rev. 2.0
page 2
2010-04-27


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