IDC08S120E datasheet(3/5 Pages) INFINEON

Part #	IDC08S120E

Description	1200V thinQ!TM SiC Schottky Diode

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Manufacturer	INFINEON [Infineon Technologies AG]

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IDC08S120E

Edited by INFINEON Technologies, AIM IMM, Rev. 2.1, 28.01.2009

Dynamic Characteristics (not subject to production test - verified by design / characterization)

Value

Parameter

Symbol

Conditions

min.

Typ.

max.

Unit

Total capacitive charge

3)

QC

Tvj =150°C

27

nC

Switching time

2)

tc

IF <=IF,max

di/dt=200A/

µs

VR=1200V

Tvj =150°C

<10

ns

VR=1V

380

VR=300V

30

Total capacitance

C

f=1MHz

VR=600V

27

pF

1) J-STD20 and JESD22

2) t

c is the time constant for the capacitive displacement current waveform (independent from Tvj = 1 50°C ,

ILOAD and di/dt), different from trr, which is dependent on Tvj =150°C, ILOAD, di/dt. No reverse recovery time

constant trr due to absence of minority carrier inject.

3) Only capacitive charge occurring, guaranteed by design (independent from T

vj, ILOAD and di/dt).

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