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IDC04S60CE Datasheet(PDF) 2 Page - Infineon Technologies AG

Part # IDC04S60CE
Description  2nd generation thinQ!TM SiC Schottky Diode
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

IDC04S60CE Datasheet(HTML) 2 Page - Infineon Technologies AG

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IDC04S60CE
Edited by INFINEON Technologies, AIM IMM, Edition 1.1, 27.01.2009
Maximum Ratings
Parameter
Symbol
Condition
Value
Unit
Repetitive peak reverse voltage
VRRM
Tvj = 25 °C
600
DC blocking voltage
VDC
600
V
Continuous forward current limited by
Tvjmax
IF
Tvj < 150°C
4
Surge non repetitive forward current
sine halfwave
IF,SM
TC =25
°C, tP =10 ms
32
Repetitive peak forward current
limited by Tvjmax
IF,RM
TC = 100
°C, Tvj =150°C,
D=0.1
18
Non-repetitive peak forward current
IF,max
TC =25
°C, tp=10µs
132
A
Operating junction and storage
temperature
Tvj ,
Tstg
-55...+175
°C
Static Characteristics (tested on wafer)
Value
Parameter
Symbol
Conditions
min.
Typ.
max.
Unit
Reverse current
IR
VR=600V
Tvj = 25 °C
0.5
50
µA
Diode forward voltage
VF
IF=4A
Tvj = 25 °C
1.7
1.9
V
Dynamic Characteristics, at
Tvj = 25 °C, unless otherwise specified, tested at component
Value
Parameter
Symbol
Conditions
min.
Typ.
max.
Unit
Total capacitive charge
QC
Tvj = 150 °C
8
nC
Switching time
1)
tc
I F <= I F, m a x
d i /d t = 2 00A/
µs
V R =40 0 V
Tvj = 150 °C
<10
ns
VR=1V
130
VR=300V
20
Total capacitance
C
f= 1MH z
VR=600V
20
pF
1) t
c is the time constant for the capacitive displacement current waveform (independent from Tvj, ILOAD and
di/dt), different from trr which is dependent on Tvj, ILOAD and di/dt. No reverse recovery time constant trr due to
absence of minority carrier injection


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