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IDC04S60CE Datasheet(PDF) 2 Page - Infineon Technologies AG |
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IDC04S60CE Datasheet(HTML) 2 Page - Infineon Technologies AG |
2 / 4 page IDC04S60CE Edited by INFINEON Technologies, AIM IMM, Edition 1.1, 27.01.2009 Maximum Ratings Parameter Symbol Condition Value Unit Repetitive peak reverse voltage VRRM Tvj = 25 °C 600 DC blocking voltage VDC 600 V Continuous forward current limited by Tvjmax IF Tvj < 150°C 4 Surge non repetitive forward current sine halfwave IF,SM TC =25 °C, tP =10 ms 32 Repetitive peak forward current limited by Tvjmax IF,RM TC = 100 °C, Tvj =150°C, D=0.1 18 Non-repetitive peak forward current IF,max TC =25 °C, tp=10µs 132 A Operating junction and storage temperature Tvj , Tstg -55...+175 °C Static Characteristics (tested on wafer) Value Parameter Symbol Conditions min. Typ. max. Unit Reverse current IR VR=600V Tvj = 25 °C 0.5 50 µA Diode forward voltage VF IF=4A Tvj = 25 °C 1.7 1.9 V Dynamic Characteristics, at Tvj = 25 °C, unless otherwise specified, tested at component Value Parameter Symbol Conditions min. Typ. max. Unit Total capacitive charge QC Tvj = 150 °C 8 nC Switching time 1) tc I F <= I F, m a x d i /d t = 2 00A/ µs V R =40 0 V Tvj = 150 °C <10 ns VR=1V 130 VR=300V 20 Total capacitance C f= 1MH z VR=600V 20 pF 1) t c is the time constant for the capacitive displacement current waveform (independent from Tvj, ILOAD and di/dt), different from trr which is dependent on Tvj, ILOAD and di/dt. No reverse recovery time constant trr due to absence of minority carrier injection |
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