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SEMIX353GD126HDC Datasheet(PDF) 1 Page - Semikron International |
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SEMIX353GD126HDC Datasheet(HTML) 1 Page - Semikron International |
1 / 5 page SEMiX353GD126HDc © by SEMIKRON Rev. 0 – 16.04.2010 1 SEMiX® 33c GD Trench IGBT Modules SEMiX353GD126HDc Features • Homogeneous Si • Trench = Trenchgate technology •VCE(sat) with positive temperature coefficient • High short circuit capability • UL recognised file no. E63532 Typical Applications* • AC inverter drives •UPS • Electronic Welding Remarks • Case temperatur limited to TC=125°C max. • Not for new design Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES 1200 V IC Tj = 150 °C Tc =25°C 364 A Tc =80°C 256 A ICnom 225 A ICRM ICRM = 2xICnom 450 A VGES -20 ... 20 V tpsc VCC = 600 V VGE ≤ 20 V VCES ≤ 1200 V Tj = 125 °C 10 µs Tj -40 ... 150 °C Inverse diode IF Tj = 150 °C Tc =25°C 329 A Tc =80°C 228 A IFnom 225 A IFRM IFRM = 2xIFnom 450 A IFSM tp = 10 ms, sin 180°, Tj =25°C 1700 A Tj -40 ... 150 °C Module It(RMS) 600 A Tstg -40 ... 125 °C Visol AC sinus 50Hz, t = 1 min 4000 V Characteristics Symbol Conditions min. typ. max. Unit IGBT VCE(sat) IC =225 A VGE =15V chiplevel Tj =25°C 1.7 2.1 V Tj = 125 °C 22.45 V VCE0 Tj =25°C 11.2 V Tj = 125 °C 0.9 1.1 V rCE VGE =15V Tj =25°C 3.1 4.0 mΩ Tj = 125 °C 4.9 6.0 mΩ VGE(th) VGE=VCE, IC =9mA 5 5.8 6.5 V ICES VGE =0V VCE = 1200 V Tj =25°C 0.1 0.3 mA Tj = 125 °C mA Cies VCE =25 V VGE =0V f=1MHz 16.0 nF Coes f=1MHz 0.84 nF Cres f=1MHz 0.73 nF QG VGE =- 8 V...+ 15 V 1800 nC RGint Tj =25°C 3.33 Ω td(on) VCC = 600 V IC =225 A RG on =2 Ω RG off =2 Ω Tj = 125 °C 265 ns tr Tj = 125 °C 55 ns Eon Tj = 125 °C 26.5 mJ td(off) Tj = 125 °C 585 ns tf Tj = 125 °C 120 ns Eoff Tj = 125 °C 32.5 mJ Rth(j-c) per IGBT 0.1 K/W |
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