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SEMIX252GB126HDS Datasheet(PDF) 1 Page - Semikron International |
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SEMIX252GB126HDS Datasheet(HTML) 1 Page - Semikron International |
1 / 5 page SEMiX252GB126HDs © by SEMIKRON Rev. 1 – 23.03.2011 1 SEMiX® 2s GB Trench IGBT Modules SEMiX252GB126HDs Features • Homogeneous Si • Trench = Trenchgate technology •VCE(sat) with positive temperature coefficient • High short circuit capability • UL recognised file no. E63532 Typical Applications* •AC inverter drives •UPS • Electronic Welding Remarks • Case temperatur limited to TC=125°C max. •Not for new design Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES 1200 V IC Tj = 150 °C Tc =25 °C 242 A Tc =80 °C 170 A ICnom 150 A ICRM ICRM = 2xICnom 300 A VGES -20 ... 20 V tpsc VCC = 600 V VGE ≤ 20 V VCES ≤ 1200 V Tj =125 °C 10 µs Tj -40 ... 150 °C Inverse diode IF Tj = 150 °C Tc =25 °C 228 A Tc =80 °C 158 A IFnom 150 A IFRM IFRM = 2xIFnom 300 A IFSM tp = 10 ms, sin 180°, Tj =25°C 1000 A Tj -40 ... 150 °C Module It(RMS) Tterminal =80 °C 600 A Tstg -40 ... 125 °C Visol AC sinus 50Hz, t = 1 min 4000 V Characteristics Symbol Conditions min. typ. max. Unit IGBT VCE(sat) IC =150 A VGE =15 V chiplevel Tj =25 °C 1.7 2.1 V Tj =125 °C 2.0 2.45 V VCE0 Tj =25 °C 11.2 V Tj =125 °C 0.9 1.1 V rCE VGE =15 V Tj =25 °C 4.7 6.0 m Tj =125 °C 7.3 9.0 m VGE(th) VGE=VCE, IC =6 mA 5 5.8 6.5 V ICES VGE =0 V VCE = 1200 V Tj =25 °C 0.1 0.3 mA Tj =125 °C mA Cies VCE =25V VGE =0 V f=1MHz 10.7 nF Coes f=1MHz 0.56 nF Cres f=1MHz 0.48 nF QG VGE = - 8 V...+ 15 V 1200 nC RGint Tj =25°C 5.00 td(on) VCC = 600 V IC =150 A VGE =±15 V RG on =3 RG off =3 Tj =125 °C 300 ns tr Tj =125 °C 45 ns Eon Tj =125 °C 20 mJ td(off) Tj =125 °C 570 ns tf Tj =125 °C 110 ns Eoff Tj =125 °C 21 mJ Rth(j-c) per IGBT 0.15 K/W |
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