SEMIX252GB126HDS datasheet(1/5 Pages) SEMIKRON

Part #	SEMIX252GB126HDS

Description	Trench IGBT Modules

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Manufacturer	SEMIKRON [Semikron International]

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SEMiX252GB126HDs

Rev. 1 – 23.03.2011

1

SEMiX® 2s

GB

Trench IGBT Modules

SEMiX252GB126HDs

Features

• Homogeneous Si

• Trench = Trenchgate technology

•VCE(sat) with positive temperature

coefficient

• High short circuit capability

• UL recognised file no. E63532

Typical Applications*

•AC inverter drives

•UPS

• Electronic Welding

Remarks

• Case temperatur limited to TC=125°C

max.

•Not for new design

Absolute Maximum Ratings

Symbol Conditions

Values

Unit

IGBT

VCES

1200

V

IC

Tj = 150 °C

Tc =25 °C

242

A

Tc =80 °C

170

A

ICnom

150

A

ICRM

ICRM = 2xICnom

300

A

VGES

-20 ... 20

V

tpsc

VCC = 600 V

VGE ≤ 20 V

VCES ≤ 1200 V

Tj =125 °C

10

µs

Tj

-40 ... 150

°C

Inverse diode

IF

Tj = 150 °C

Tc =25 °C

228

A

Tc =80 °C

158

A

IFnom

150

A

IFRM

IFRM = 2xIFnom

300

A

IFSM

tp = 10 ms, sin 180°, Tj =25°C

1000

A

Tj

-40 ... 150

°C

Module

It(RMS)

Tterminal =80 °C

600

A

Tstg

-40 ... 125

°C

Visol

AC sinus 50Hz, t = 1 min

4000

V

Characteristics

Symbol Conditions

min.

typ.

max.

Unit

IGBT

VCE(sat)

IC =150 A

VGE =15 V

chiplevel

Tj =25 °C

1.7

2.1

V

Tj =125 °C

2.0

2.45

V

VCE0

Tj =25 °C

11.2

V

Tj =125 °C

0.9

1.1

V

rCE

VGE =15 V

Tj =25 °C

4.7

6.0

m

Tj =125 °C

7.3

9.0

m

VGE(th)

VGE=VCE, IC =6 mA

5

5.8

6.5

V

ICES

VGE =0 V

VCE = 1200 V

Tj =25 °C

0.1

0.3

mA

Tj =125 °C

mA

Cies

VCE =25V

VGE =0 V

f=1MHz

10.7

nF

Coes

f=1MHz

0.56

nF

Cres

f=1MHz

0.48

nF

QG

VGE = - 8 V...+ 15 V

1200

nC

RGint

Tj =25°C

5.00



td(on)

VCC = 600 V

IC =150 A

VGE =±15 V

RG on =3 

RG off =3 

Tj =125 °C

300

ns

tr

Tj =125 °C

45

ns

Eon

Tj =125 °C

20

mJ

td(off)

Tj =125 °C

570

ns

tf

Tj =125 °C

110

ns

Eoff

Tj =125 °C

21

mJ

Rth(j-c)

per IGBT

0.15

K/W

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