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SSR30C100S1 Datasheet(PDF) 1 Page - Solid States Devices, Inc |
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SSR30C100S1 Datasheet(HTML) 1 Page - Solid States Devices, Inc |
1 / 2 page NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: SH0043C DOC Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com Designer’s Data Sheet Part Number / Ordering Information 1/ SSR30C __ __ __ │ │ │ │ │ │ │ │ └ Screening 2/ __ = Not Screened TX = TX Level TXV = TXV S = S Level │ │ └ Package S1 = SMD1 └ Voltage 100 = 1000 V 120 = 1200 V SSR30C100S1 & SSR30C120S1 30 A / 1200 V Schottky Silicon Carbide Rectifier FEATURES: • 1200 Volt Silicon Carbide Schottky Rectifier • Average Output Current 30 Amps • No Reverse Recovery • No Forward Recovery • No Switching Time Change Over Temperature • Small Package Size • TX, TXV, and Space Level Screening Available. 2/ Consult Factory. MAXIMUM RATINGS 3/ Symbol Value Units Peak Repetitive and Peak Reverse Voltage SSR30C100S1 SSR30C120S1 VRRM VR 1000 1200 Volts Average Rectified Forward Current 4/ (Resistive Load, 60 Hz, Sine Wave) Total IO 30 Amps Peak Surge Current 4/ (8.3 ms Pulse, Half Sine Wave, TA = 25 oC) Total IFSM 180 Amps Operating & Storage Temperature TOP & Tstg -55 to +250 oC Junction Temperature TJ -55 to +250 oC Maximum Thermal Resistance 4/ (Junction to Case) Total RθJC 0.8 oC/W NOTES: 1/ For Ordering Information, Price, and Availability Contact Factory. 2/ Screened to MIL-PRF-19500. 3/ Unless Otherwise Specified, All Electrical Characteristics @25ºC 4/ Terminal Pads 1 & 3 Must be connected together for testing and at the Board Level. SMD1 |
Similar Part No. - SSR30C100S1_1 |
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Similar Description - SSR30C100S1_1 |
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