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SSR30C100S1 Datasheet(PDF) 1 Page - Solid States Devices, Inc

Part # SSR30C100S1
Description  Schottky Silicon Carbide Rectifier
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Manufacturer  SSDI [Solid States Devices, Inc]
Direct Link  http://www.ssdi-power.com
Logo SSDI - Solid States Devices, Inc

SSR30C100S1 Datasheet(HTML) 1 Page - Solid States Devices, Inc

  SSR30C100S1_1 Datasheet HTML 1Page - Solid States Devices, Inc SSR30C100S1_1 Datasheet HTML 2Page - Solid States Devices, Inc  
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NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: SH0043C
DOC
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Designer’s Data Sheet
Part Number / Ordering Information 1/
SSR30C __
__ __
Screening 2/ __ = Not Screened
TX = TX Level
TXV = TXV
S = S Level
Package
S1 = SMD1
Voltage
100 = 1000 V
120 = 1200 V
SSR30C100S1
&
SSR30C120S1
30 A / 1200 V
Schottky Silicon Carbide
Rectifier
FEATURES:
• 1200 Volt Silicon Carbide Schottky Rectifier
• Average Output Current 30 Amps
• No Reverse Recovery
• No Forward Recovery
• No Switching Time Change Over
Temperature
• Small Package Size
• TX, TXV, and Space Level Screening
Available.
2/ Consult Factory.
MAXIMUM RATINGS 3/
Symbol
Value
Units
Peak Repetitive and Peak Reverse Voltage
SSR30C100S1
SSR30C120S1
VRRM
VR
1000
1200
Volts
Average Rectified Forward Current
4/
(Resistive Load, 60 Hz, Sine Wave)
Total
IO
30
Amps
Peak Surge Current
4/
(8.3 ms Pulse, Half Sine Wave, TA = 25
oC)
Total
IFSM
180
Amps
Operating & Storage Temperature
TOP & Tstg
-55 to +250
oC
Junction Temperature
TJ
-55 to +250
oC
Maximum Thermal Resistance
4/
(Junction to Case)
Total
RθJC
0.8
oC/W
NOTES:
1/ For Ordering Information, Price, and Availability Contact Factory.
2/ Screened to MIL-PRF-19500.
3/ Unless Otherwise Specified, All Electrical Characteristics @25ºC
4/ Terminal Pads 1 & 3 Must be connected together for testing and at the Board Level.
SMD1


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