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SEMIX151GAL12E4S Datasheet(PDF) 1 Page - Semikron International |
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SEMIX151GAL12E4S Datasheet(HTML) 1 Page - Semikron International |
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1 / 5 page  SEMiX151GAL12E4s © by SEMIKRON Rev. 0 – 05.05.2010 1 SEMiX® 1s GAL Trench IGBT Modules SEMiX151GAL12E4s Features • Homogeneous Si • Trench = Trenchgate technology •VCE(sat) with positive temperature coefficient • High short circuit capability • UL recognized, file no. E63532 Typical Applications* • AC inverter drives •UPS • Electronic Welding Remarks • Case temperature limited to TC=125°C max. • Product reliability results are valid for Tj=150°C Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES 1200 V IC Tj = 175 °C Tc =25°C 232 A Tc =80°C 179 A ICnom 150 A ICRM ICRM = 3xICnom 450 A VGES -20 ... 20 V tpsc VCC = 800 V VGE ≤ 20 V VCES ≤ 1200 V Tj = 150 °C 10 µs Tj -40 ... 175 °C Inverse diode IF Tj = 175 °C Tc =25°C 189 A Tc =80°C 141 A IFnom 150 A IFRM IFRM = 3xIFnom 450 A IFSM tp = 10 ms, sin 180°, Tj =25°C 900 A Tj -40 ... 175 °C Freewheeling diode IF Tj = 175 °C Tc =25°C 189 A Tc =80°C 141 A IFnom 150 A IFRM IFRM = 3xIFnom 450 A IFSM tp = 10 ms, sin 180°, Tj =25°C 900 A Tj -40 ... 175 °C Module It(RMS) 600 A Tstg -40 ... 125 °C Visol AC sinus 50Hz, t = 1 min 4000 V Characteristics Symbol Conditions min. typ. max. Unit IGBT VCE(sat) IC =150 A VGE =15V chiplevel Tj =25°C 1.8 2.05 V Tj = 150 °C 2.2 2.4 V VCE0 Tj =25°C 0.8 0.9 V Tj = 150 °C 0.7 0.8 V rCE VGE =15V Tj =25°C 6.7 7.7 mΩ Tj = 150 °C 10.0 10.7 mΩ VGE(th) VGE=VCE, IC =6mA 5 5.8 6.5 V ICES VGE =0V VCE = 1200 V Tj =25°C 0.1 0.3 mA Tj = 150 °C mA Cies VCE =25 V VGE =0V f=1MHz 9.3 nF Coes f=1MHz 0.58 nF Cres f=1MHz 0.51 nF QG VGE =- 8 V...+ 15 V 850 nC RGint Tj =25°C 5.00 Ω |
Similar Part No. - SEMIX151GAL12E4S_10 |
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Similar Description - SEMIX151GAL12E4S_10 |
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