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ID100_TO-78 Datasheet(PDF) 1 Page - Micross Components |
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ID100_TO-78 Datasheet(HTML) 1 Page - Micross Components |
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1 / 1 page Click To Buy Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603788920, Email: baredie@micross.com Web: www.micross.com/distribution.aspx Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems. FEATURES DIRECT REPLACEMENT FOR INTERSIL ID100 REVERSE LEAKAGE CURRENT IR = 0.1pA REVERSE BREAKDOWN VOLTAGE BVR ≥ 30V REVERSE CAPACITANCE Crss = 0.75pF ABSOLUTE MAXIMUM RATINGS (Note 1) @ 25°C (unless otherwise noted) Maximum Temperatures Storage Temperature ‐65°C to +200°C Operating Junction Temperature ‐55°C to +150°C Maximum Power Dissipation Continuous Power Dissipation 300mW Maximum Currents Forward Current 20mA Reverse Current 100µA Maximum Voltages Reverse Voltage 30V Diode to Diode Voltage ±50V ID100 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTICS MIN. TYP. MAX. UNITS CONDITIONS BVR Reverse Breakdown Voltage 30 ‐‐ ‐‐ V IR = 1µA VF Forward Voltage 0.8 ‐‐ 1.1 V IF = 10mA IR Reverse Leakage Current ‐‐ 0.1 ‐‐ pA VR = 1V ‐‐ 2.0 10 VR = 10V |IR1‐IR2| Differential Leakage Current ‐‐ ‐‐ 3 CrSS Total Reverse Capacitance(Note 2) ‐‐ 0.75 1 pF VR = 10V, f = 1MHz The ID100 is a low leakage Monolithic Dual Pico-Amp Diode ID100 LOW LEAKAGE PICO-AMP DUAL DIODE Available Packages: ID100 in TO-78 ID100 available as bare die Please contact Micross for full package and die dimensions Linear Systems replaces discontinued Intersil ID100 Note 1 - Absolute maximum ratings are limiting values above which ID100 serviceability may be impaired. Note 2 - Design reference only, not 100% tested Micross Components Europe Tel: +44 1603 788967 Email: chipcomponents@micross.com Web: http://www.micross.com/distribution The ID100 low-leakage monolithic dual diode provides a superior alternative to conventional diode technology when reverse current (leakage) must be minimized. In addition the monolithic dual construction allows excellent capacitance matching per diode. The ID100 features a leakage current of 0.1 pA and is well suited for use in applications such as input protection for operational amplifiers. ID100 Benefits: Negligible Circuit Leakage Contribution Circuit “Transparent” Except to Shunt High-Frequency Spikes Simplicity of Operation ID100 Applications: Op Amp Input Protection Multiplexer Overvoltage Protection FIGURE 1 – Operational Amplifier Protection Input Differential Voltage limited to 0.8V (typ) by Diodes ID100 D1 and D2. Common Mode Input voltage limited by Diodes ID100 D3 and D4 to ±15V. FIGURE 2 – Sample & Hold Circuit Typical Sample and Hold circuit with clipping. ID100 diodes reduce offset voltages fed capacitively from the ID100 switch gate. TO-78 (Bottom View) Note pins 3 & 5 must not be connected, in any fashion or manner, to any circuit or node |
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