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3N190_TO-78 Datasheet(PDF) 1 Page - Micross Components

Part # 3N190_TO-78
Description  a monolithic dual enhancement mode P-Channel Mosfet
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Manufacturer  MICROSS [Micross Components]
Direct Link  http://www.micross.com
Logo MICROSS - Micross Components

3N190_TO-78 Datasheet(HTML) 1 Page - Micross Components

  3N190_TO-78 Datasheet HTML 1Page - Micross Components  
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Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.
FEATURES 
DIRECT REPLACEMENT FOR INTERSIL 3N190 
LOW GATE LEAKAGE CURRENT 
IGSS ≤ ± 10pA 
LOW TRANSFER CAPACITANCE 
Crss ≤ 1.0pF 
ABSOLUTE MAXIMUM RATINGS
1@ 25°C (unless otherwise noted) 
Maximum Temperatures 
Storage Temperature ‐65°C to +150°C 
Operating Junction Temperature ‐55°C to +135°C 
Maximum Power Dissipation 
Continuous Power Dissipation (one side) 
300mW 
Continuous Power Dissipation (one side)
525mW 
MAXIMUM CURRENT
Drain to Source
2 
50mA 
MAXIMUM VOLTAGES 
Drain to Gate or Drain to Source
2 ‐30V 
Transient Gate to Source
2,3
±125V 
Gate‐Gate Voltage 
±80V 
3N190 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL 
CHARACTERISTIC 
MIN 
TYP. 
MAX 
UNITS 
CONDITIONS 
BVDSS 
Drain to Source Breakdown Voltage ‐40 
‐‐ 
‐‐ 
 
 
I= ‐10µA 
BVSDS 
Source to Drain Breakdown Voltage ‐40 
‐‐ 
‐‐ 
I= ‐10µA,   VBD = 0V 
VGS 
Gate to Source Voltage ‐3.0 
‐‐ 
‐6.5 
VDS = ‐15V,   I= ‐500µA 
VGS(th) 
Gate to Source Threshold Voltage ‐2.0 
‐‐ 
‐5.0 
VDS = ‐15V,   I= ‐500µA 
‐2.0 
‐‐ 
‐5.0 
VDS =  VGS ,   I= ‐10µA 
IGSSR 
Gate Reverse Leakage Current 
‐‐ 
‐‐ 
10  
 
pA 
VGS = 40V 
IGSSF 
Forward Gate Leakage Current 
‐‐ 
‐‐ 
‐10 
VGS = ‐40V 
IDSS 
Drain to Source Leakage Current 
‐‐ 
‐‐ 
‐200 
VDS = ‐15V 
ISDS 
Source to Drain Leakage Current 
‐‐ 
‐‐ 
‐400 
VSD = ‐15V  VDB = 0 
ID(on) 
Drain Current “On” ‐5.0 
‐‐ 
‐30 
mA 
VDS = ‐15V,  VGS = ‐10V 
rDS(on) 
Drain to Source “On” Resistance 
‐‐ 
‐‐ 
300 Ω 
VDS = ‐20V,   ID = ‐100µA 
gfs 
Forward Transconductance
1500 
‐‐ 
4000 
µS 
VDS = ‐15V,    ID = ‐5mA ,   f = 1kHz 
Yos 
Output Admittance 
‐‐ 
‐‐ 
300 
Ciss  Input Capacitance 
‐‐ 
‐‐ 
4.5  
pF 
 
VDS = ‐15V,    I= ‐5mA ,   f = 1MHz 
Crss 
Reverse Transfer Capacitance 
‐‐ 
‐‐ 
1.0 
Coss 
Output Capacitance 
‐‐ 
‐‐ 
3.0 
MATCHING CHARACTERISTICS 3N190                                                                                                                                      
SYMBOL 
CHARACTERISTIC 
LIMITS  
UNITS 
 
CONDITIONS 
MIN 
MAX 
gfs1/gfs2  
Forward Transconductance Ratio 
0.85 
1.0 
ns 
VDS = ‐15V,    I= ‐500µA ,   f = kHz 
VGS1‐2 
Gate Source Threshold Voltage 
Differential
5 
‐‐ 
100 
mV 
VDS = ‐15V,    I= ‐500µA 
∆VGS1‐2/∆T 
Gate Source Threshold Voltage 
Differential Change with Temperature
5 
 
‐‐ 
 
100 
 
µV/°C 
VDS = ‐15V,    I= ‐500µA, T= ‐55°C to +25°C 
VDS = ‐15V,    I= ‐500µA, T= +25°C to +125°C 
SWITCHING CHARACTERISTICS   
SYMBOL 
CHARACTERISTIC 
MIN 
TYP 
MAX 
UNITS 
CONDITIONS 
td(on) 
Turn On Delay Time 
‐‐ 
‐‐ 
15 
 
ns 
 
VDD = ‐15V, ID(on) = ‐5mA, R= R= 1.4KΩ 
tr 
Turn On Rise Time 
‐‐ 
‐‐ 
30 
toff 
Turn Off Time 
‐‐ 
‐‐ 
50 
The 3N190 is a monolithic dual enhancement mode P-Channel Mosfet
3N190
P-CHANNEL MOSFET
The 3N190 is a dual enhancement mode P-Channel
Mosfet and is ideal for space constrained applications
and those requiring tight electrical matching.
The hermetically sealed TO-78 package is well suited
for high reliability and harsh environment applications.
(See Packaging Information).
Tel: +44 1603 788967
Email: chipcomponents@micross.com
Web: http://www.micross.com/distribution
Device Schematic
TO-78 (Bottom View)
Available Packages:
3N190 in TO-72
3N190 in bare die.
Please contact Micross for full
package and die dimensions
3N190 Features:
Very high Input Impedance
High Gate Breakdown Voltage
Low Capacitance
Note 1 ‐ Absolute maximum ratings are limiting values above which 3N190 serviceability may be impaired. 
Note 2 – Per Transistor 
Note 3 – Approximately doubles for every 10
°C in TA 
Note 4 – Measured at end points, 
Tand T
Note 5 – Pulse: t= 300µS, Duty Cycle ≤ 3% 


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